STGP30NC60W STMicroelectronics, STGP30NC60W Datasheet - Page 6

• Manufacturer Part Number: STGP30NC60W
• Description: IGBT N-CHAN 600V 30A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGP30NC60W

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 30A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-6734-5; STGP30NC60W

Internally clamped IGBTs for electronic ignition
IGBT intelligent power modules (IPM)
4. T
IGBT power modules for 3-phase inverters
STGB35N35LZT4
STGB35N35LZ-1
STGD18N40LZT4
STGD18N40LZ-1
STGB18N40LZ-1
STGP18N40LZ
STGB10NB37LZT4
STGB10NB40LZT4
STGB20NB41LZT4
STGP10NB37LZ
STGIPS10K60A
STGIPS14K60
STGIPS20K60
STGIPL14K60
STGIP3M25N60
STG3P2M10N60B
STG3P3M25N60
STGB18N40LZT4
STGB20NB37LZT4
C
= 80 °C
Part number
Part number
Part number
Voltage
V
CES
Clamped
600
V
Voltage
V
voltage
CES
CES
350
390
400
410
600
(V)
(V)
(V)
SEMITOP 2
SEMITOP 3
Package
SDIP-25L Molded
SDIP-38L Molded
SEMITOP 3
Package
Package
TO-220
TO-220
D
D
D
D
I
DPAK
I
2
IPAK
2
2
2
2
2
PAK
PAK
PAK
PAK
PAK
PAK
I
C
at T
Current
C
(A)
10
25
= 80 °C
I
I
C
C
at T
at T
Current
Current
C
25
C
(A)
(A)
30
30
25
25
30
30
30
20
10
10
20
10
10
12
17
14
= 100 °C
= 25 °C
V
4
T
CE(sat)
C
1.7
1.7
= 125 °C, V
On voltage at
(V)
GE
V
V
CE(sat)
CE(sat)
= 15 V
T
I
T
C
C
1.35
1.35
20
C
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.8
1.8
1.8
1.8
7
(A)
= 125 °C, V
= 125 °C, V
On voltage at
On voltage at
(V)
(V)
dissipation
GE
GE
Power
= 4.5 V
= 15 V
I
I
(W)
C
C
56
96
15
15
10
10
10
10
10
20
20
20
20
20
12
20
5
7
7
(A)
(A)