STGP7NC60H STMicroelectronics, STGP7NC60H Datasheet - Page 6

• Manufacturer Part Number: STGP7NC60H
• Description: IGBT N-CHAN 25A 600V TO220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGP7NC60H

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 7A
• Current - Collector (ic) (max): 25A
• Power - Max: 80W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 25 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 80W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4113-5

STGP7NC60H - STGD7NC60H
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Figure 15: Thermal Impedance for TO-220
Figure 16: Thermal Impedance for DPAK
Figure 17: Turn-Off SOA
Figure 18: Ic vs Frequency
For a fast IGBT suitable for high frequency appli-
cations, the typical collector current vs. maximum
operating frequency curve is reported. That fre-
quency is defined as follows:
1) The maximum power dissipation is limited by
maximum junction to case thermal resistance:
considering T = T
2) The conduction losses are:
with 50% of duty cycle, V
@125°C.
3) Power dissipation during ON & OFF commuta-
tions is due to the switching frequency:
4) Typical values @ 125°C for switching losses are
used (test conditions: V
R
ergy is included in the E
tail of the collector current is included in the E
measurements (see note 3).
G
= 3.3 Ohm). Furthermore, diode recovery en-
f
MAX
P
SW
P
P
= (P
C
J
D
= (E
= I
- T
= T / R
D
C
C
ON
ON
- P
CE
* V
= 125 °C- 75 °C = 50°C
C
(see note 2), while the
+ E
CE(SAT)
= 390V, V
) / (E
CESAT
THJ-C
OFF
ON
) * freq.
*
typical value
+ E
GE
OFF
= 15V,
)
OFF