SIDC16D60SIC3 Infineon Technologies, SIDC16D60SIC3 Datasheet - Page 2

• Manufacturer Part Number: SIDC16D60SIC3
• Description: DIODE SCHOTTKY 600V 5A WAFER
• Manufacturer: Infineon Technologies

Specifications of SIDC16D60SIC3

• Voltage - Forward (vf) (max) @ If: 1.7V @ 5A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 5A (DC)
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 170pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: Wafer
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000014898

Maximum Ratings
Parameter
Repetitive peak reverse voltage
Surge peak reverse voltage
Continuous forward current limited by
T
Single pulse forward current
(depending on wire bond configuration)
Maximum repetitive forward current
limited by T
Non repetitive peak forward current
Operating junction and storage
temperature
Static Electrical Characteristics
Parameter
Reverse leakage current
Forward voltage drop
* blocking characteristic measured under protective gas atmosphere. Chip should not be used without being
embedded in pottant with breakdown field strength lower than 9 KV/mm at full blocking voltage.
Dynamic Electrical Characteristics
Parameter
Total capacitive charge
Switching time
Total capacitance
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.01.2004
jmax
jmax
I
V
Q
t
C
Symbol
Symbol
R
r r
F
C
Symbol
V
V
I
I
I
I
T
V
I
I
di / d t = 2 0 0 A / s
V
I
di/dt=200A/ s
V
I
di/dt=200A/ s
T
f=1MHz
F
F S M
FRM
F M A X
F
F
F
F
j
R
R
j
R R M
RSM
= 5A
= 5A
= 5A
R
(tested on chip), T j =25 C, unless otherwise specified
= 5A
=25 C
=400V
= 4 0 0 V
, T
= 6 0 0 V *
, at T
s t g
Conditions
Conditions
j
T
= 25 C, unless otherwise specified, tested at component
C
=25 C, t
T
C
T
T
T
T
T
V
V
V
= 100 C, T
C
j
j
j
j
R
R
R
= 2 5 C
= 2 5 C
=25 C, tp=10µs
=1V
=300V
=600V
= 1 5 0 ° C
= 1 5 0 ° C
Condition
P
D = 0 . 1
=10 ms sinusoidal
SIDC16D60SIC3
j
= 1 5 0 C,
min.
min.
Typ.
Typ.
Value
Value
n.a.
170
1.5
19
14
16
12
-55...+175
Value
18.5
600
600
21
50
5
max.
max.
200
1.7
Unit
V
A
Unit
µA
V
Unit
nC
ns
pF
C