SIDC16D60SIC3 Infineon Technologies, SIDC16D60SIC3 Datasheet

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SIDC16D60SIC3

Manufacturer Part Number
SIDC16D60SIC3
Description
DIODE SCHOTTKY 600V 5A WAFER
Manufacturer
Infineon Technologies
Datasheet

Specifications of SIDC16D60SIC3

Voltage - Forward (vf) (max) @ If
1.7V @ 5A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
5A (DC)
Current - Reverse Leakage @ Vr
200µA @ 600V
Diode Type
Silicon Carbide Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Capacitance @ Vr, F
170pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
Wafer
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SP000014898
Silicon Carbide Schottky Diode
FEATURES:
Chip Type
SIDC16D60SIC3
MECHANICAL PARAMETER:
Raster size
Anode pad size
Area total / active
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Anode metalization
Cathode metalization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, 22.01.2004
Silicon Carbide
Worlds first 600V Schottky diode
Revolutionary semiconductor material -
Switching behavior benchmark
No reverse recovery
No temperature influence on the switching
behavior
Ideal diode for Power Factor Correction
No forward recovery
V
600V
BR
I
F
5A
Die Size
1.26 x 1.26 mm
Applications:
SMPS, PFC, snubber
suitable for epoxy and soft solder die bonding
< 6 month at an ambient temperature of 23°C
store in original container, in dry nitrogen,
electrically conductive glue or solder
2
0.960 x 0.960
1400 nm Ni Ag –system
1.588 / 0.96
SIDC16D60SIC3
1.26 x 1.26
Package
sawn on foil
355
75
0
Al,
3200 nm Al
Photoimide
2457 pcs
0.2 mm
125µm
Ordering Code
Q67050-A4271-
A101
A
C
mm
mm
mm
deg
µm
2

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SIDC16D60SIC3 Summary of contents

Page 1

... Die Size 1.26 x 1.26 mm suitable for epoxy and soft solder die bonding electrically conductive glue or solder store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C SIDC16D60SIC3 A C Package Ordering Code Q67050-A4271- sawn on foil A101 1.26 x 1.26 0.960 x 0.960 1 ...

Page 2

... Chip should not be used without being embedded in pottant with breakdown field strength lower than 9 KV/mm at full blocking voltage. Dynamic Electrical Characteristics Parameter Symbol Total capacitive charge Q C Switching time Total capacitance C Edited by INFINEON Technologies HV3, Edition 1, 22.01.2004 SIDC16D60SIC3 Symbol Condition RSM = =10 ms sinusoidal ...

Page 3

... CHIP DRAWING: Edited by INFINEON Technologies HV3, Edition 1, 22.01.2004 SIDC16D60SIC3 960 ...

Page 4

... Life support devices or systems are intended to be implanted in the human body support and / or maintain and sustain and / or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies HV3, Edition 1, 22.01.2004 SIDC16D60SIC3 INFINEON TECHNOLOGIES SDT05S60 ...

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