SS26T3 ON Semiconductor, SS26T3 Datasheet - Page 2

• Manufacturer Part Number: SS26T3
• Description: DIODE SCHOTTKY POWER 2A 60V SMB
• Manufacturer: ON Semiconductor

Specifications of SS26T3

• Voltage - Forward (vf) (max) @ If: 630mV @ 2A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 200µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Other names: SS26T3OSCT

1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Thermal Resistance − Junction−to−Lead (Note 1)
Thermal Resistance − Junction−to−Ambient (Note 2)
Maximum Instantaneous Forward Voltage (Note 3)
Maximum Instantaneous Reverse Current (Note 3)
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
0.1
10
1
0.1
0
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.2
Figure 1. Typical Forward Voltage
10
Figure 3. Typical Reverse Current
125°C
25°C
75°C
0.3
V
R
, REVERSE VOLTAGE (V)
20
Characteristic
Characteristic
0.4
125°C
30
0.5
75°C
0.6
40
25°C
0.7
http://onsemi.com
50
(V
(i
(i
F
F
R
= 1.0 A)
= 2.0 A)
= 60 V)
0.8
60
2
0.1
10
100
1
10
Symbol
Symbol
0.1
0
R
R
v
I
qJA
qJL
R
F
V
F
0.2
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
10
Figure 4. Typical Capacitance
T
V
0.3
J
R
0.51
0.63
= 25°C
0.2
, REVERSE VOLTAGE (V)
20
0.4
Value
Value
24
80
30
T
0.5
J
125°C
0.475
= 125°C
0.55
20
40
0.6
75°C
25°C
f = 1 MHz
50
25°C
0.7
°C/W
Unit
Unit
mA
V
0.8
60