STTA306B-TR STMicroelectronics, STTA306B-TR Datasheet - Page 4

• Manufacturer Part Number: STTA306B-TR
• Description: DIODE TURBO 3A 600V DPAK
• Manufacturer: STMicroelectronics
• Series: TURBOSWITCH™r

Specifications of STTA306B-TR

• Voltage - Forward (vf) (max) @ If: 1.85V @ 3A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 20µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

STTA306B
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference Tj=125°C).
Fig. 9: Forward recovery time versus dI
confidence).
4/8
1.1
1.0
0.9
0.8
0.7
300
250
200
150
100
50
0
25
0
tfr(ns)
20
40
50
60
S factor
80
dIF/dt(A/µs)
Tj(°C)
100 120 140 160 180 200
75
IRM
100
VFR=1.1*VF max.
Tj=125°C
IF=IF(av)
F
/dt (90%
125
Fig. 8: Transient peak forward voltage versus
dI
24
22
20
18
16
14
12
10
Fig. 10: Junction capacitance versus reverse
voltage applied (typical values).
10
8
6
4
2
0
5
2
1
F
0
1
/dt (90% confidence).
VFP(V)
C(pF)
Tj=125°C
IF=IF(av)
20
40
60
80
dIF/dt(A/µs)
10
VR(V)
100 120 140 160 180 200
F=1MHz
100
200