STTA306B-TR STMicroelectronics, STTA306B-TR Datasheet - Page 3

• Manufacturer Part Number: STTA306B-TR
• Description: DIODE TURBO 3A 600V DPAK
• Manufacturer: STMicroelectronics
• Series: TURBOSWITCH™r

Specifications of STTA306B-TR

• Voltage - Forward (vf) (max) @ If: 1.85V @ 3A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 20µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

Fig. 1: Conduction losses versus average current.
Fig. 3: Relative variation of thermal transient
impedance junction to ambient versus pulse
duration (recommended pad layout).
Fig. 5: Reverse recovery time versus dI
confidence).
3.0
2.5
2.0
1.5
1.0
0.5
0.0
350
300
250
200
150
100
50
1E+0
1E-1
1E-2
1E-3
0.0
0
0
P1(W)
trr(ns)
1E-3
Zth(j-a) (°C/W)
0.2
20
= 0.1
= 0.5
= 0.2
dIF/dt(A/µs)
Single pulse
1E-2
40
0.4
= 0.05
60
IF=2*IF(av)
0.6
1E-1
80
0.8
= 0.1
IF(av) (A)
tp(s)
100 120 140 160 180 200
1E+0
IF=IF(av)
1.0
= 0.2
1.2
1E+1
= 0.5
=tp/T
1.4
1E+2 5E+2
F
T
VR=400V
Tj=125°C
/dt (90%
= 1
1.6
tp
1.8
Fig. 2: Forward voltage drop versus forward
current (maximum values).
5E+1
1E+1
1E+0
Fig. 4: Peak reverse recovery current versus dI
(90% confidence).
Fig. 6: Softness factor (tb/ta) versus dI
values).
9
8
7
6
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1E-1
1E-2
0
IRM(A)
0
S factor
0.0
VR=400V
Tj=125°C
IFM(A)
20
20
0.5
40
40
60
60
1.0
Tj=125°C
80
80
dIF/dt(A/µs)
dIF/dt(A/µs)
1.5
100 120 140 160 180 200
100 120 140 160 180 200
IF=2*IF(av)
2.0
Tj=25°C
VFM(V)
IF=IF(av)
2.5
STTA306B
F
IF<2*IF(av)
/dt (typical
VR=400V
Tj=125°C
3.0
F
3/8
/dt
3.5