SMBYW04-200 STMicroelectronics, SMBYW04-200 Datasheet - Page 3
![DIODE FAST REC 200V 4A SMC](/photos/5/36/53652/497-do-214ab_sml.jpg)
SMBYW04-200
Manufacturer Part Number
SMBYW04-200
Description
DIODE FAST REC 200V 4A SMC
Manufacturer
STMicroelectronics
Datasheet
1.SMBYW04-200.pdf
(6 pages)
Specifications of SMBYW04-200
Voltage - Forward (vf) (max) @ If
1.25V @ 12A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
4A
Current - Reverse Leakage @ Vr
10µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35ns
Mounting Type
Surface Mount
Package / Case
DO-214AB, SMC
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
1.25 V at 12 A
Recovery Time
35 ns
Forward Continuous Current
4 A
Max Surge Current
70 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Details
Other names
497-2502-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SMBYW04-200
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
SMBYW04-200
Manufacturer:
Mag
Quantity:
1 450
Fig. 3: Average forward current versus ambient
temperature ( =0.5).
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (SMBYW04-200).
12
10
Fig. 6-1: Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu)=35 m) (SMBYW04-200).
1.00
0.10
0.01
1E-3
8
6
4
2
1E-2
0
IM(A)
IF(av)(A)
Zth(j-a)/Rth(j-a)
I
M
= 0.5
= 0.1
= 0.2
=tp/T
Single pulse
=0.5
t
25
T
Rth(j-a)=Rth(j-l)
1E-1
tp
SMC
1E-2
50
1E+0
Tamb(°C)
Rth(j-a)=75°C/W
tp(s)
t(s)
75
1E+1
1E-1
100
Rth(j-a)=Rth(j-c)
DPAK
=tp/T
1E+2
125
Ta=50°C
T
Ta=25°C
tp
1E+0
5E+2
150
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (BYW4200B).
Fig. 6-2: Variation of thermal impedance junction
to case versus pulse duration (BYW4200B).
1.0
0.5
0.2
0.1
Fig. 4: Forward voltage drop versus forward
current (maximum values).
70.0
10.0
50
45
40
35
30
25
20
15
10
1E-3
5
0
1.0
0.1
1E-3
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
IM(A)
Zth(j-c)/Rth(j-c)
IFM(A)
= 0.1
I
= 0.5
= 0.2
M
Single pulse
=0.5
t
Tj=100°C
1E-2
1E-2
SMBYW04-200 / BYW4200B
(Typical values)
Tj=100°C
tp(s)
t(s)
1E-1
1E-1
Tj=25°C
VFM(V)
=tp/T
Tc=125°C
T
Tc=75°C
tp
1E+0
1E+0
3/6