IDH16S60C Infineon Technologies, IDH16S60C Datasheet - Page 3

• Manufacturer Part Number: IDH16S60C
• Description: DIODE SCHOTTKY 600V 16A TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDH16S60C

• Diode Type: Silicon Carbide Schottky
• Voltage - Forward (vf) (max) @ If: 1.7V @ 16A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 16A (DC)
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 650pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 16A
• Forward Voltage Vf Max: 1.7V
• Reverse Recovery Time Trr Max: 10ns
• Forward Surge Current Ifsm Max: 118A
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 16.0 A
• Qc (typ): 38.0 nC
• Package: TO-220 real 2pin
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IDT16S60C; IDT16S60C; IDT16S60CX; IDT16S60CXK; SP000080227; SP000797666

Rev. 2.0
1 Power dissipation
P
parameter: R
3 Typ. forward characteristic
I
parameter: T
F
tot
=f(V
=f(T
140
120
100
80
60
40
20
25
20
15
10
F
0
5
0
); t
C
25
0
)
p
=400 µs
thJC(max)
j
50
0.5
75
1
100
T
V
C
1.5
F
[°C]
[V]
-55 °C
25 °C
125
150 °C
2
100 °C
150
175 °C
2.5
175
200
page 3
3
2 Diode forward current
I
parameter: R
4 Typ. forward characteristic in surge current
mode
I
F
F
=f(T
=f(V
160
120
100 °C 150 °C
80
40
35
30
25
20
15
10
C
F
5
0
0
); T
); t
25
0
p
j
=400 µs; parameter: T
≤175 °C
thJC(max)
50
2
75
; V
150 °C
F(max)
100
100 °C
T
V
C
F
25 °C
4
[°C]
[V]
125
j
-55 °C
150
6
IDH16S60C
175
175 °C
2010-04-27
200
8