IDH16S60C Infineon Technologies, IDH16S60C Datasheet

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IDH16S60C

Manufacturer Part Number
IDH16S60C
Description
DIODE SCHOTTKY 600V 16A TO220-2
Manufacturer
Infineon Technologies
Series
thinQ!™r
Datasheet

Specifications of IDH16S60C

Diode Type
Silicon Carbide Schottky
Voltage - Forward (vf) (max) @ If
1.7V @ 16A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
16A (DC)
Current - Reverse Leakage @ Vr
200µA @ 600V
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Capacitance @ Vr, F
650pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
16A
Forward Voltage Vf Max
1.7V
Reverse Recovery Time Trr Max
10ns
Forward Surge Current Ifsm Max
118A
Technology
thinQ!™ 2G
V
600.0 V
If (typ)
16.0 A
Qc (typ)
38.0 nC
Package
TO-220 real 2pin
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IDT16S60C
IDT16S60C
IDT16S60CX
IDT16S60CXK
SP000080227
SP000797666

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDH16S60C
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IDH16S60C
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.0
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
• Breakdown voltage tested at 5mA
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Maximum ratings, at T
Parameter
Continuous forward current
RMS forward current
Surge non-repetitive forward current,
sine halfwave
Repetitive peak forward current
Non-repetitive peak forward current
i ²t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
Mounting torque
Soldering temperature,
wavesoldering only allowed at leads
2
Type
IDH16S60C
nd
Generation thinQ!
Package
PG-TO220-2
j
=25 °C, unless otherwise specified
TM
SiC Schottky Diode
1)
for target applications
2)
Symbol Conditions
dv/ dt
I
I
I
I
I
∫i
V
P
T
T
F
F,RMS
F,SM
F,RM
F,max
2
j
sold
RRM
tot
, T
dt
Marking
D16S60C
stg
T
f =50 Hz
T
T
T
T
T
V
T
M3 and M3.5 screws
1.6mm (0.063 in.) from
case for 10s
page 1
C
C
j
C
C
C
C
R
=150 °C,
<140 °C
=25 °C, t
=100 °C, D =0.1
=25 °C, t
=25 °C, t
=25 °C
= 0….480V
Pin 1
C
p
p
p
=10 ms
=10 µs
=10 ms
Product Summary
V
Q
I
F
DC
c
Pin 2
A
-55 ... 175
Value
118
528
600
136
260
16
23
64
69
50
60
IDH16S60C
600
38
16
Unit
A
A
V
V/ns
W
°C
Mcm
°C
V
nC
A
2
2010-04-27
s

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IDH16S60C Summary of contents

Page 1

... F,max =25 °C, t =10 ms ∫ RRM V = 0….480V dv =25 °C tot stg M3 and M3.5 screws 1.6mm (0.063 in.) from T sold case for 10s page 1 IDH16S60C 600 Pin 2 A Value Unit 118 64 528 600 V 50 V/ns 136 W -55 ... 175 °C 60 Mcm 260 °C ...

Page 2

... V, T =150 ° =400 V,I ≤ F,max c di /dt =200 A/µ =150 ° MHz =300 MHz R V =600 MHz di/dt. No reverse recovery time constant t j LOAD page 2 IDH16S60C Values Unit min. typ. max 1.1 K 600 - - V - 1.5 1.7 - 1.7 2 200 µ 2000 , - ...

Page 3

... I =f 160 100 °C 25 °C 175 °C -55 °C 150 °C 120 1 [V] F 100 °C 150 °C page 3 IDH16S60C ≤175 ° thJC(max) F(max 100 125 150 175 T [°C] C =400 µs; parameter -55 °C 175 °C 25 °C 100 °C 150 ° ...

Page 4

... Typ. reverse current vs. reverse voltage I =f parameter 0 100 [A] 8 Typ. capacitance vs. reverse voltage C =f 800 700 600 500 400 300 200 100 [s] page 4 IDH16S60C j 175 °C 150 °C 100 °C 25 °C -55 °C 200 300 400 500 V [V] R =25 ° MHz [V] R 600 3 10 2010-04-27 ...

Page 5

... Typ. C stored energy E =f 100 200 V Rev. 2.0 10 Typ. capacitance charge vs. current slope Q =f(di / 300 400 500 600 100 [V] R page 5 IDH16S60C =150 °C; I ≤ F,max 400 700 di /dt [A/µs] F 1000 2010-04-27 ...

Page 6

... PG-TO220-2: Outline Dimensions in mm/inches Rev. 2.0 page 6 IDH16S60C 38 2010-04-27 ...

Page 7

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 7 IDH16S60C 2010-04-27 ...

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