IDH10SG60C Infineon Technologies, IDH10SG60C Datasheet - Page 2

• Manufacturer Part Number: IDH10SG60C
• Description: DIODE SCHOTTKY 600V 10A TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDH10SG60C

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 2.1V @ 10A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 10A (DC)
• Current - Reverse Leakage @ Vr: 90µA @ 600V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 290pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 10A
• Forward Voltage Vf Max: 2.1V
• Reverse Recovery Time Trr Max: 10ns
• Forward Surge Current Ifsm Max: 51A
• Technology: thinQ!™ 3G
• V: 600.0 V
• If (typ): 10.0 A
• Qc (typ): 16.0 nC
• Package: TO-220 real 2pin
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Details
• Other names: SP000607040

Rev. 2.3
1)
2)
3)
di/dt), different from t
absence of minority carrier injection.
4)
5)
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
DC blocking voltage
Diode forward voltage
Reverse current
AC characteristics
Total capacitive charge
Switching time
Total capacitance
J-STD20 and JESD22
All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA.
Under worst case Z
t
Only capacitive charge occuring, guaranteed by design.
c
is the time constant for the capacitive displacement current waveform (independent from T
3)
rr
th
which is dependent on T
conditions.
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
Q
t
C
R
c
DC
F
thJC
thJA
c
j
, I
Thermal resistance,
junction- ambient,
leaded
I
I
I
V
V
V
di
T
V
V
V
LOAD
R
F
F
page 2
j
=10 A, T
=10 A, T
R
R
R
R
R
R
=0.05 mA, T
=150 °C
F
=600 V, T
=600 V, T
=400 V,I
=1 V, f =1 MHz
=300 V, f =1 MHz
=600 V, f =1 MHz
/dt =200 A/µs,
and di/dt. No reverse recovery time constant t
j
j
=25 °C
=150 °C
F
≤I
j
j
=25 °C
=150 °C
j
F,max
=25 °C
,
min.
600
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
290
1.8
2.2
0.8
3.3
16
40
40
-
-
-
-
IDH10SG60C
max.
1.25
860
<10
j
2.1
, I
62
90
-
-
-
-
-
-
LOAD
rr
and
due to
Unit
K/W
V
µA
nC
ns
pF
2009-08-04