IDH10SG60C Infineon Technologies, IDH10SG60C Datasheet

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IDH10SG60C

Manufacturer Part Number
IDH10SG60C
Description
DIODE SCHOTTKY 600V 10A TO220-2
Manufacturer
Infineon Technologies
Series
thinQ!™r
Datasheet

Specifications of IDH10SG60C

Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
2.1V @ 10A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
10A (DC)
Current - Reverse Leakage @ Vr
90µA @ 600V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F
290pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
10A
Forward Voltage Vf Max
2.1V
Reverse Recovery Time Trr Max
10ns
Forward Surge Current Ifsm Max
51A
Technology
thinQ!™ 3G
V
600.0 V
If (typ)
10.0 A
Qc (typ)
16.0 nC
Package
TO-220 real 2pin
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
 Details
Other names
SP000607040

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Part Number
Manufacturer
Quantity
Price
Part Number:
IDH10SG60C
Manufacturer:
Infineon
Quantity:
500
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IDH10SG60C
Manufacturer:
INFINEON/英飞凌
Quantity:
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Part Number:
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Manufacturer:
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Quantity:
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Company:
Part Number:
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Rev. 2.3
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
• Breakdown voltage tested at 20mA
• Optimized for high temperature operation
• Lowest Figure of Merit Q
thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
Maximum ratings
Parameter
Continuous forward current
Surge non-repetitive forward current,
sine halfwave
Non-repetitive peak forward current
i ²t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
Soldering temperature,
wavesoldering only allowed at leads
Mounting torque
3
Type
IDH10SG60C
rd
Generation thinQ!
Package
PG-TO220-2
C
TM
/I
F
SiC Schottky Diode
1)
for target applications
2)
Symbol Conditions
dv/ dt
I
I
I
∫i
V
P
T
T
F
F,SM
F,max
2
j
sold
RRM
tot
, T
dt
Marking
D10G60C
stg
T
T
T
T
T
T
T
V
T
1.6mm (0.063 in.) from
case for 10s
M3 and M3.5 screws
R
page 1
C
C
C
C
C
C
j
C
=25 °C
= 0….480 V
<130 °C
=25 °C, t
=150 °C, t
=25 °C, t
=25 °C, t
=150 °C, t
=25 °C
Pin 1
C
p
p
p
=10 ms
=10 µs
=10 ms
p
p
=10 ms
=10 ms
Product Summary
V
Q
I
F
DC
; T
C
C
< 130 °C
Pin 2
A
-55 ... 175
Value
410
120
260
600
10
51
44
13
10
50
60
IDH10SG60C
600
16
10
Unit
A
A
V
V/ns
W
°C
Ncm
2
2009-08-04
s
nC
V
A

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IDH10SG60C Summary of contents

Page 1

... =150 ° =25 °C RRM 0….480 V dv =25 °C tot stg 1.6mm (0.063 in.) from T sold case for 10s M3 and M3.5 screws page 1 IDH10SG60C 600 < 130 ° Pin 2 A Value 410 13 10 600 50 120 -55 ... 175 260 Unit V/ns W ° ...

Page 2

... V, T =150 ° =400 V,I ≤ F,max c di /dt =200 A/µ =150 ° MHz =300 MHz R V =600 MHz and di/dt. No reverse recovery time constant t j LOAD page 2 IDH10SG60C Values Unit min. typ. max 1.25 K 600 - - V - 1.8 2 0.8 90 µA - 3.3 860 , - ...

Page 3

... C 4 Typ. forward characteristic in surge current mode I =f -55 °C 25 °C 100 °C 60 150 °C 40 175 ° [V] F page 3 IDH10SG60C ; T ≤175 °C; parameter 0.1 0.3 0.5 0 100 125 150 T [°C] C =400 µs; parameter -55 °C 25 °C 100 °C 150 °C 175 ° ...

Page 4

... Typ. reverse current vs. reverse voltage I =f(V ); parameter 100 700 1000 8 Typ. capacitance vs. reverse voltage / 350 300 250 200 150 100 [s] p page 4 IDH10SG60C j 175 °C 150 °C 100 °C 25 °C -55 °C 200 300 400 500 V [V] R =25 ° MHz [V] R 600 3 10 2009-08-04 ...

Page 5

... Typ. C stored energy E =f 100 200 V Rev. 2.3 300 400 500 600 [V] R page 5 IDH10SG60C 2009-08-04 ...

Page 6

... PG-TO220-2: Outline Dimensions in mm/inches Rev. 2.3 page 6 IDH10SG60C 2009-08-04 ...

Page 7

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 page 7 IDH10SG60C 2009-08-04 ...

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