IDB45E60 Infineon Technologies, IDB45E60 Datasheet - Page 6

• Manufacturer Part Number: IDB45E60
• Description: DIODE 600V 71A TO263-3
• Manufacturer: Infineon Technologies

Specifications of IDB45E60

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 2V @ 45A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 71A (DC)
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 140ns
• Mounting Type: Surface Mount
• Product: Power Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 45 A
• Max Surge Current: 162 A
• Configuration: Single
• Recovery Time: 140 ns
• Forward Voltage Drop: 2 V
• Maximum Reverse Leakage Current: 50 uA
• Maximum Power Dissipation: 187 W
• Operating Temperature Range: - 55 C to + 175 C
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Packages: PG-TO263-3
• If (typ): 45.0 A
• If (max): 71.0 A
• If,sm (max): 162.0 A
• Vf (typ): 1.5 V
• Ir (max): 50.0 µA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IDB45E60XT

9 Max. transient thermal impedance
Z
parameter : D = t
Rev.2.2
thJC
K/W
10
10
10
10
10
10
-1
-2
-3
-4
= f (t
1
0
10
IDP45E60
-7
p
10
single pulse
)
-6
10
p
-5
/T
10
-4
10
-3
10
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
t
s
p
10
0
Page 6
2007-09-01
IDB45E60