IDB45E60 Infineon Technologies, IDB45E60 Datasheet - Page 4

• Manufacturer Part Number: IDB45E60
• Description: DIODE 600V 71A TO263-3
• Manufacturer: Infineon Technologies

Specifications of IDB45E60

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 2V @ 45A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 71A (DC)
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 140ns
• Mounting Type: Surface Mount
• Product: Power Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 45 A
• Max Surge Current: 162 A
• Configuration: Single
• Recovery Time: 140 ns
• Forward Voltage Drop: 2 V
• Maximum Reverse Leakage Current: 50 uA
• Maximum Power Dissipation: 187 W
• Operating Temperature Range: - 55 C to + 175 C
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Packages: PG-TO263-3
• If (typ): 45.0 A
• If (max): 71.0 A
• If,sm (max): 162.0 A
• Vf (typ): 1.5 V
• Ir (max): 50.0 µA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IDB45E60XT

Rev.2.2
1 Power dissipation
P
parameter: T j ≤ 175 °C
3 Typ. diode forward current
I
F
tot
= f (V
W
A
195
165
150
135
120
105
140
100
= f (T
90
75
60
45
30
15
80
60
40
20
0
0
25
0
F
)
C
)
50
0.5
75
1
-55°C
25°C
100°C
150°C
100
1.5
125
V
°C
T
V
C
F
175
2.5
Page 4
2 Diode forward current
I
parameter: T
4 Typ. diode forward voltage
V
F
F
= f(T
= f (T
A
V
2.4
1.8
1.6
1.4
1.2
80
60
50
40
30
20
10
0
2
1
-60
25
C
)
j
)
50
-20
j
≤ 175°C
75
20
100
22,5A
45A
90A
60
125
2007-09-01
100
IDB45E60
°C
°C
T
T
C
j
175
160