BYT79X-600,127 NXP Semiconductors, BYT79X-600,127 Datasheet - Page 5

• Manufacturer Part Number: BYT79X-600,127
• Description: DIODE RECT 600V 15A TO-220F
• Manufacturer: NXP Semiconductors

Specifications of BYT79X-600,127

• Package / Case: TO-220-2 Full Pack, ITO-220AC
• Voltage - Forward (vf) (max) @ If: 1.38V @ 15A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 15A
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Mounting Type: Through Hole
• Product: Switching Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 40 A
• Max Surge Current: 274 A
• Configuration: Single
• Recovery Time: 55 ns
• Forward Voltage Drop: 1.9 V
• Maximum Reverse Leakage Current: 200 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934060593127; BYT79X-600; BYT79X-600

NXP Semiconductors
BYT79X-600_1
Product data sheet
Fig 3. Reverse recovery definitions
Fig 5. Forward power dissipation as a function of
I
I
R
F
P
(W)
tot
30
20
10
0
I
average forward current; square waveform;
maximum values
F(AV)
0
dl
dt
= I
F
F(RMS)
I
RM
Q
6
r
0.1
0.2
t
rr
12
0.5
18
I
= 1
003aab477
F(AV)
(A)
Rev. 01 — 29 October 2007
24
001aab911
10 %
time
100 %
Fig 4. Forward recovery definitions
Fig 6. Forward power dissipation as a function of
V
I
F
F
P
(W)
tot
20
16
12
8
4
0
a = form factor = I
average forward current; sinusoidal waveform;
maximum values
0
4.0
5
F(RMS)
2.8
/ I
2.2
F(AV)
BYT79X-600
Rectifier diode ultrafast
10
1.9
a = 1.57
I
© NXP B.V. 2007. All rights reserved.
F(AV)
003aab478
(A)
V
F
15
001aab912
time
time
V
5 of 9
FR