BYT79X-600,127 NXP Semiconductors, BYT79X-600,127 Datasheet - Page 4

• Manufacturer Part Number: BYT79X-600,127
• Description: DIODE RECT 600V 15A TO-220F
• Manufacturer: NXP Semiconductors

Specifications of BYT79X-600,127

• Package / Case: TO-220-2 Full Pack, ITO-220AC
• Voltage - Forward (vf) (max) @ If: 1.38V @ 15A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 15A
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Mounting Type: Through Hole
• Product: Switching Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 40 A
• Max Surge Current: 274 A
• Configuration: Single
• Recovery Time: 55 ns
• Forward Voltage Drop: 1.9 V
• Maximum Reverse Leakage Current: 200 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934060593127; BYT79X-600; BYT79X-600

NXP Semiconductors
7. Characteristics
Table 6.
T
BYT79X-600_1
Product data sheet
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
I
V
R
rr
RM
j
Fig 2. Forward current as a function of forward voltage
F
FR
r
= 25 C unless otherwise specified.
(1) T
(2) T
(3) T
j
j
j
= 150 C; typical values
= 150 C; maximum values
= 25 C; maximum values
Characteristics
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery
voltage
(A)
I
F
50
40
30
20
10
Conditions
I
I
V
V
I
see
I
dI
I
dI
see
I
see
F
F
F
F
F
F
0
R
R
F
F
= 15 A; T
= 15 A; see
= 2 A to V
= 1 A to V
= 10 A to V
= 10 A; dI
0
/dt = 100 A/ s; see
/dt = 50 A/ s; T
= 600 V
= 600 V; T
Figure 3
Figure 3
Figure 4
Rev. 01 — 29 October 2007
j
F
R
R
= 150 C; see
/dt = 10 A/ s;
R
j
Figure 2
= 100 C
0.6
30 V; dI
30 V;
30 V;
j
= 100 C;
Figure 3
F
/dt = 20 A/ s;
(1)
Figure 2
1.2
(2)
(3)
003aab479
V
F
(V)
1.8
Min
-
-
-
-
-
-
-
-
BYT79X-600
Typ
1.01
1.16
5
0.2
40
50
3.0
3.2
Rectifier diode ultrafast
© NXP B.V. 2007. All rights reserved.
Max
1.20
1.38
50
0.8
70
60
5.2
-
Unit
V
V
mA
nC
ns
A
V
A
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