PMEG3002AEB,115 NXP Semiconductors, PMEG3002AEB,115 Datasheet - Page 2

DIODE SCHOTTKY 30V 0.2A SOD523

PMEG3002AEB,115

Manufacturer Part Number
PMEG3002AEB,115
Description
DIODE SCHOTTKY 30V 0.2A SOD523
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMEG3002AEB,115

Package / Case
SC-79, SOD-523
Mounting Type
Surface Mount
Speed
Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr
10µA @ 10V
Voltage - Forward (vf) (max) @ If
480mV @ 200mA
Voltage - Dc Reverse (vr) (max)
30V
Capacitance @ Vr, F
25pF @ 1V, 1MHz
Current - Average Rectified (io)
200mA (DC)
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
1 A
Configuration
Single
Forward Voltage Drop
0.48 V
Maximum Reverse Leakage Current
10 uA @ 10 V
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934057098115::PMEG3002AEB T/R::PMEG3002AEB T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMEG3002AEB,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
FEATURES
• Forward current: 0.2 A
• Reverse voltage: 30 V
• Very low forward voltage
• Ultra small SMD package.
APPLICATIONS
• Ultra high-speed switching
• High efficiency DC/DC conversion
• Voltage clamping
• Inverse-polarity protection
• Low voltage rectification
• Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection, encapsulated in a SOD523 (SC-79) ultra
small SMD plastic package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2002 May 06
V
I
I
I
T
T
T
SYMBOL
F
FRM
FSM
stg
j
amb
R
Low V
F
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
MEGA Schottky barrier diode
PARAMETER
t
t
JEDEC method
p
p
≤ 1 s; δ ≤ 0.5
= 8.3 ms half sinewave;
2
, 4 columns
PINNING
CONDITIONS
Marking code: B1.
The marking bar indicates the cathode.
Fig.1
Simplified outline (SOD523; SC-79) and
symbol.
PIN
1
1
2
−65
−65
MIN.
cathode
anode
PMEG3002AEB
DESCRIPTION
2
MGU328
Product data sheet
30
200
300
1
+150
125
+125
MAX.
V
mA
mA
A
°C
°C
°C
UNIT

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