PMEG3002AEB,115 NXP Semiconductors, PMEG3002AEB,115 Datasheet

DIODE SCHOTTKY 30V 0.2A SOD523

PMEG3002AEB,115

Manufacturer Part Number
PMEG3002AEB,115
Description
DIODE SCHOTTKY 30V 0.2A SOD523
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMEG3002AEB,115

Package / Case
SC-79, SOD-523
Mounting Type
Surface Mount
Speed
Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr
10µA @ 10V
Voltage - Forward (vf) (max) @ If
480mV @ 200mA
Voltage - Dc Reverse (vr) (max)
30V
Capacitance @ Vr, F
25pF @ 1V, 1MHz
Current - Average Rectified (io)
200mA (DC)
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
1 A
Configuration
Single
Forward Voltage Drop
0.48 V
Maximum Reverse Leakage Current
10 uA @ 10 V
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934057098115::PMEG3002AEB T/R::PMEG3002AEB T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMEG3002AEB,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
PMEG3002AEB
Low V
MEGA Schottky barrier
F
diode
Product data sheet
2002 May 06

Related parts for PMEG3002AEB,115

PMEG3002AEB,115 Summary of contents

Page 1

DATA SHEET PMEG3002AEB Low V MEGA Schottky barrier F diode Product data sheet DISCRETE SEMICONDUCTORS M3D319 2002 May 06 ...

Page 2

... NXP Semiconductors Low V MEGA Schottky barrier diode F FEATURES • Forward current: 0.2 A • Reverse voltage • Very low forward voltage • Ultra small SMD package. APPLICATIONS • Ultra high-speed switching • High efficiency DC/DC conversion • Voltage clamping • Inverse-polarity protection • ...

Page 3

... NXP Semiconductors Low V MEGA Schottky barrier diode F ELECTRICAL CHARACTERISTICS = 25 °C; unless otherwise specified. T amb SYMBOL PARAMETER V continuous forward voltage F I continuous reverse current R C diode capacitance d Note = 300 μs; δ = 0.02. 1. Pulsed test THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ...

Page 4

... NXP Semiconductors Low V MEGA Schottky barrier diode F GRAPHICAL DATA 4 10 handbook, halfpage I F (mA (1) (2) ( 0.2 0.4 = 125 °C. (1) T amb = 85 °C. (2) T amb = 25 °C. (3) T amb Fig.2 Forward current as a function of forward voltage; typical values. 40 handbook, halfpage (pF ° MHz; T amb Fig.4 Diode capacitance as a function of reverse voltage ...

Page 5

... NXP Semiconductors Low V MEGA Schottky barrier diode F PACKAGE OUTLINE Plastic surface mounted package; 2 leads (1) OUTLINE VERSION IEC SOD523 2002 May REFERENCES JEDEC JEITA SC-79 5 PMEG3002AEB 0 0.5 scale DIMENSIONS (mm are the original dimensions) UNIT 0.34 0.17 0.65 1.25 mm 0.26 0.11 0.58 1.15 Note 1 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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