BAS21H,115 NXP Semiconductors, BAS21H,115 Datasheet - Page 4

• Manufacturer Part Number: BAS21H,115
• Description: DIODE SWITCH 200V 200MA SOD123
• Manufacturer: NXP Semiconductors

Specifications of BAS21H,115

• Package / Case: SOD-123 Flat Leads
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 50ns
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 9 A
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934059307115; BAS21H T/R; BAS21H T/R

NXP Semiconductors
7. Characteristics
BAS21H_2
Product data sheet
Table 7.
T
[1]
[2]
Symbol Parameter
V
I
C
t
R
rr
amb
F
d
Pulse test: t
When switched from I
= 25 C unless otherwise specified.
forward voltage
reverse current
diode capacitance
reverse recovery time
Characteristics
p
300 s;
F
= 30 mA to I
Rev. 02 — 3 November
0.02.
R
Conditions
I
I
V
V
V
= 30 mA; R
F
F
R
R
R
= 100 mA
= 200 mA
= 200 V
= 200 V; T
= 0 V; f = 1 MHz
L
= 100 ; measured at I
j
= 150 C
Single high-voltage switching diode
[1]
[1]
[2]
Min
-
-
-
-
-
-
R
= 3 mA.
Typ
-
-
-
-
-
-
© NXP B.V. 2006. All rights reserved.
BAS21H
Max
1
1.25
100
100
5
50
Unit
V
V
nA
pF
ns
4 of 10
A