BAS21H,115 NXP Semiconductors, BAS21H,115 Datasheet - Page 3

• Manufacturer Part Number: BAS21H,115
• Description: DIODE SWITCH 200V 200MA SOD123
• Manufacturer: NXP Semiconductors

Specifications of BAS21H,115

• Package / Case: SOD-123 Flat Leads
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 50ns
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 9 A
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934059307115; BAS21H T/R; BAS21H T/R

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BAS21H_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Table 6.
[1]
[2]
[3]
Symbol
V
V
I
I
I
P
T
T
T
Symbol
R
R
F
FRM
FSM
j
amb
stg
RRM
R
tot
th(j-a)
th(j-sp)
Pulse test: t
T
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Soldering point of cathode tab.
j
= 25 C prior to surge.
Limiting values
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
p
300 s;
Rev. 02 — 3 November
0.02.
Conditions
in free air
Conditions
t
square wave
T
p
amb
= 0.25
= 1 ms;
t
t
t
p
p
p
= 1 s
= 100 s
= 10 ms
25 C
Single high-voltage switching diode
[1][2]
[3]
[1]
[2]
[3]
Min
-
-
Min
-
-
-
-
-
-
-
-
-
65
65
Typ
-
-
© NXP B.V. 2006. All rights reserved.
BAS21H
Max
250
200
200
625
9
3
1.7
375
150
+150
+150
Max
330
70
Unit
V
V
mA
mA
A
A
A
mW
C
C
C
Unit
K/W
K/W
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