BAS85,135 NXP Semiconductors, BAS85,135 Datasheet - Page 7

• Manufacturer Part Number: BAS85,135
• Description: DIODE SCHOTTKY 30V 200MA SOD80C
• Manufacturer: NXP Semiconductors

Specifications of BAS85,135

• Package / Case: LL-34, LLDS, MiniMELF, SOD80C
• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 2.3µA @ 25V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 5 A
• Configuration: Single
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2.3 uA @ 25 V
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933876540135; BAS85 /T3; BAS85 /T3

NXP Semiconductors
11. Revision history
Table 9.
BAS85
Product data sheet
Document ID
BAS85_6
Modifications:
BAS85_5
BAS85_4
BAS85_3
BAS85_2
Revision history
Release date
20100910
20090325
20000525
19961001
19960320
•
•
Section 4
Section 12 “Legal
All information provided in this document is subject to legal disclaimers.
“Marking”: updated
Data sheet status
Product data sheet
Product data sheet
Product specification
Product specification
Product specification
Rev. 6 — 10 September 2010
information”: updated
Change notice
-
-
-
-
-
Supersedes
BAS85_5
BAS85_4
BAS85_3
BAS85_2
-
Schottky barrier diode
© NXP B.V. 2010. All rights reserved.
BAS85
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