BAS85,135 NXP Semiconductors, BAS85,135 Datasheet - Page 3

• Manufacturer Part Number: BAS85,135
• Description: DIODE SCHOTTKY 30V 200MA SOD80C
• Manufacturer: NXP Semiconductors

Specifications of BAS85,135

• Package / Case: LL-34, LLDS, MiniMELF, SOD80C
• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 2.3µA @ 25V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 5 A
• Configuration: Single
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2.3 uA @ 25 V
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933876540135; BAS85 /T3; BAS85 /T3

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAS85
Product data sheet
Table 6.
[1]
Table 7.
T
[1]
Symbol
R
Symbol
V
I
C
R
amb
F
th(j-a)
d
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Pulse test: t
= 25
°
C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
p
≤ 300 μs; δ ≤ 0.02.
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 10 September 2010
V
Conditions
I
I
I
I
I
V
F
F
F
F
F
R
R
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
= 25 V
= 1 V; f = 1 MHz
Conditions
in free air
[1]
[1]
Min
-
Min
-
-
-
-
-
-
-
Schottky barrier diode
Typ
-
Typ
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
BAS85
Max
320
Max
240
320
400
500
800
2.3
10
Unit
K/W
3 of 10
Unit
mV
mV
mV
mV
mV
μA
pF