BAW62,113 NXP Semiconductors, BAW62,113 Datasheet - Page 6

• Manufacturer Part Number: BAW62,113
• Description: DIODE SW 75V 250MA H-S DO-35
• Manufacturer: NXP Semiconductors

Specifications of BAW62,113

• Package / Case: DO-204AH, DO-35, Axial
• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 5µA @ 75V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Product: Switching Diodes
• Peak Reverse Voltage: 75 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Operating Temperature Range: + 200 C
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933101220113; BAW62 T/R; BAW62 T/R

NXP Semiconductors
1996 Sep 17
handbook, full pagewidth
High-speed diode
(1) I
V = V
R = 50
R
S
R = 50
= 1 mA.
S
R
I
I x R
Ω
F
Ω
S
1 k
D.U.T.
Ω
450
I F
Fig.7 Reverse recovery voltage test circuit and waveforms.
Fig.8 Forward recovery voltage test circuit and waveforms.
D.U.T.
Ω
OSCILLOSCOPE
MGA882
R = 50
i
OSCILLOSCOPE
Ω
SAMPLING
R = 50
MGA881
i
Ω
I
V R
6
10%
t r
10%
t r
90%
90%
input signal
signal
input
t p
t p
t
t
V
I F
V fr
output signal
output
Product data sheet
signal
t rr
BAW62
(1)
t
t