BAW62,113 NXP Semiconductors, BAW62,113 Datasheet - Page 4

• Manufacturer Part Number: BAW62,113
• Description: DIODE SW 75V 250MA H-S DO-35
• Manufacturer: NXP Semiconductors

Specifications of BAW62,113

• Package / Case: DO-204AH, DO-35, Axial
• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 5µA @ 75V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Product: Switching Diodes
• Peak Reverse Voltage: 75 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Operating Temperature Range: + 200 C
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933101220113; BAW62 T/R; BAW62 T/R

NXP Semiconductors
GRAPHICAL DATA
1996 Sep 17
handbook, full pagewidth
handbook, halfpage
High-speed diode
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2
Based on square wave currents.
T
j
I FSM
= 25 °C prior to surge.
(A)
10
(mA)
10
I F
10
300
200
100
−1
1
2
0
1
0
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
100
10
T amb (
o
C)
MBG448
200
10
4
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
600
I F
400
200
j
j
j
= 175 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
0
0
Forward current as a function of forward
voltage.
10
3
(1)
1
t p (μs)
(2)
V F (V)
Product data sheet
(3)
MBG704
BAW62
MBG464
10
4
2