1N4448,133 NXP Semiconductors, 1N4448,133 Datasheet - Page 6

DIODE HI-SPEED 100V 200MA DO-35

1N4448,133

Manufacturer Part Number
1N4448,133
Description
DIODE HI-SPEED 100V 200MA DO-35
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 1N4448,133

Package / Case
DO-204AH, DO-35, Axial
Voltage - Forward (vf) (max) @ If
1V @ 100mA
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
25nA @ 20V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
4pF @ 0V, 1MHz
Mounting Type
Through Hole
Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
200 mA
Max Surge Current
450 mA
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
0.72 V
Maximum Reverse Leakage Current
25 nA
Maximum Power Dissipation
500 mW
Operating Temperature Range
- 65 C to + 150 C
Maximum Diode Capacitance
4 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933120350133
NXP Semiconductors
2004 Aug 10
handbook, full pagewidth
High-speed diodes
(1) I
V = V
R = 50
R
S
R = 50
= 1 mA.
S
R
I
I x R
F
S
1 k
D.U.T.
450
I F
Fig.7 Reverse recovery voltage test circuit and waveforms.
Fig.8 Forward recovery voltage test circuit and waveforms.
D.U.T.
OSCILLOSCOPE
MGA882
R = 50
i
OSCILLOSCOPE
SAMPLING
R = 50
MGA881
i
I
V R
6
10%
t r
10%
t r
90%
90%
input signal
signal
input
t p
t p
t
t
V
1N4148; 1N4448
I F
V fr
output signal
Product data sheet
output
signal
t rr
(1)
t
t

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