1N4448,133 NXP Semiconductors, 1N4448,133 Datasheet - Page 5

• Manufacturer Part Number: 1N4448,133
• Description: DIODE HI-SPEED 100V 200MA DO-35
• Manufacturer: NXP Semiconductors

Specifications of 1N4448,133

• Package / Case: DO-204AH, DO-35, Axial
• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 25nA @ 20V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 200 mA
• Max Surge Current: 450 mA
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 0.72 V
• Maximum Reverse Leakage Current: 25 nA
• Maximum Power Dissipation: 500 mW
• Operating Temperature Range: - 65 C to + 150 C
• Maximum Diode Capacitance: 4 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933120350133

NXP Semiconductors
2004 Aug 10
High-speed diodes
(1) V
(2) V
Fig.5
(µA)
I
R
10 −
10 −
10
10
10
1
R
R
3
2
1
2
0
= 75 V; typical values.
= 20 V; typical values.
Reverse current as a function of junction
temperature.
100
(1)
T
j
(°C)
(2)
mgd290
200
5
handbook, halfpage
f = 1 MHz; T
Fig.6
(pF)
C d
1.2
1.0
0.8
0.6
0.4
0
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 °C.
1N4148; 1N4448
10
V R (V)
Product data sheet
MGD004
20