STTH102 STMicroelectronics, STTH102 Datasheet - Page 3

• Manufacturer Part Number: STTH102
• Description: IC DIODE ULTRAFAST 220V 1A DO-41
• Manufacturer: STMicroelectronics

Specifications of STTH102

• Voltage - Forward (vf) (max) @ If: 970mV @ 1A
• Voltage - Dc Reverse (vr) (max): 220V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 1µA @ 220V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20ns
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 0.97 V
• Recovery Time: 20 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Reverse Current Ir: 1 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-3666-2; 497-3666-2; 497-3666-3

STTH102
Figure 3.
Figure 5.
Figure 7.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10.0
1.E-01
1.0
0.1
0
I
Z
F(AV)
0.0
δ = 0.5
δ = 0.2
δ = 0.1
th(j-c)
I
FM
Single pulse
δ
=tp/T
(A)
(A)
0.2
/R
25
th(j-c)
T
0.4
Average forward current versus
ambient temperature (δ = 0.5) (SMA)
Relative variation of thermal
impedance junction to ambient
versus pulse duration (epoxy
printed circuit board, e
recommended pad layout) (SMA)
Forward voltage drop versus
forward current
(typical values)
1.E+00
T =125°C
tp
j
0.6
50
(maximum values)
T =125°C
j
0.8
75
T
1.0
amb
R
1.E+01
t (s)
th(j-a)
V
p
FM
1.2
=120°C/W
(°C)
(maximum values)
(V)
100
T =25°C
j
1.4
R
th(j-a)
=R
1.6
th(j-I)
125
1.E+02
1.8
(Cu)
δ
=tp/T
2.0
150
= 35 µm,
T
2.2
tp
1.E+03
175
2.4
Figure 4.
Figure 6.
Figure 8.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
10
1.E-01
1
0
I
Z
1
C(pF)
Single pulse
F(AV)
δ = 0.5
δ = 0.2
δ = 0.1
th(j-c)
δ
=tp/T
(A)
/R
25
th(j-c)
T
Average forward current versus
ambient temperature (δ = 0.5)
(DO-41)
Relative variation of thermal
impedance junction to ambient
versus pulse duration (DO-41)
Junction capacitance versus
reverse voltage applied
(typical values)
1.E+00
tp
50
10
75
T
amb
1.E+01
R
t (s)
th(j-a)
p
V (V)
R
=110°C/W
(°C)
100
R
th(j-a)
100
=R
th(j-I)
125
1.E+02
Characteristics
δ
=tp/T
V
OSC
150
F=1MHz
T =25°C
=30mV
T
j
tp
RMS
1.E+03
1000
175
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