APT60DQ120BG Microsemi Power Products Group, APT60DQ120BG Datasheet - Page 3

• Manufacturer Part Number: APT60DQ120BG
• Description: IC DIODE UFAST 60A 1200V TO-247
• Manufacturer: Microsemi Power Products Group

Specifications of APT60DQ120BG

• Voltage - Forward (vf) (max) @ If: 3.3V @ 60A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 60A
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 320ns
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: APT60DQ120BGMP; APT60DQ120BGMP

Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 6. Dynamic Parameters vs. Junction Temperature
7000
6000
5000
4000
3000
2000
1000
200
180
160
140
120
100
300
250
200
150
100
Figure 8. Junction Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
50
0
Figure 2. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
T
V
V
I
J
F
R
RRM
F
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
T
= 125°C
/dt, CURRENT RATE OF CHANGE (A/µs)
t
= 800V
, ANODE-TO-CATHODE VOLTAGE (V)
rr
J
200
, JUNCTION TEMPERATURE (°C)
25
120A
V
R
, REVERSE VOLTAGE (V)
T
T
J
400
J
50
= 125°C
= 175°C
Q
rr
10
600
75
800
100
T
30A
J
t
= -55°C
T
rr
Q
J
1000
125
rr
= 25°C
100 200
60A
1200
150
Figure 3. Reverse Recovery Time vs. Current Rate of Change
Figure 7. Maximum Average Forward Current vs. CaseTemperature
Figure 5. Reverse Recovery Current vs. Current Rate of Change
500
400
300
200
100
100
40
35
30
25
20
15
10
90
80
70
60
40
30
20
10
0
5
0
0
0
0
25
-di
-di
T
V
F
J
R
F
/dt, CURRENT RATE OF CHANGE(A/µs)
= 125°C
= 800V
/dt, CURRENT RATE OF CHANGE (A/µs)
200
200
50
Case Temperature (°C)
400
400
75
120A
120A
600
600
100
30A
60A
60A
800
125
800
Duty cycle = 0.5
T
1000
J
1000
T
150
V
J
= 175°C
R
= 125°C
= 800V
30A
1200
1200
175