1N5821G ON Semiconductor, 1N5821G Datasheet - Page 5

• Manufacturer Part Number: 1N5821G
• Description: DIODE SCHOTTKY 3A 30V DO-201AD
• Manufacturer: ON Semiconductor

Specifications of 1N5821G

• Voltage - Forward (vf) (max) @ If: 500mV @ 3A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 2mA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 3 A
• Max Surge Current: 80 A
• Configuration: Single
• Forward Voltage Drop: 0.9 V @ 9.4 A
• Maximum Reverse Leakage Current: 2000 uA
• Operating Temperature Range: - 65 C to + 125 C
• Mounting Style: Through Hole
• Current, Forward: 3 A
• Current, Reverse: 20 mA
• Current, Surge: 80 A
• Package Type: DO-201AD
• Primary Type: Schottky Barrier
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -65 to +125 °C
• Voltage, Forward: 0.5 V
• Voltage, Reverse: 30 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1N5821G; 1N5821GOS

125
115
105
125
115
105
95
85
75
95
85
75
0.05
0.03
0.02
0.01
1.0
0.5
0.3
0.2
0.1
4.0
2.0
0.2
Figure 1. Maximum Reference Temperature
Figure 3. Maximum Reference Temperature
The temperature of the lead should be measured using a ther‐
mocouple placed on the lead as close as possible to the tie point.
The thermal mass connected to the tie point is normally large
enough so that it will not significantly respond to heat surges
generated in the diode as a result of pulsed operation once
steady-state conditions are achieved. Using the measured
value of T
T
J
5.0
= T
3.0
L
R
+ DT
qJA
R
0.5
qJA
L
, the junction temperature may be determined by:
(°C/W) = 70
7.0
JL
4.0
V
V
(°C/W) = 70
R
R
, REVERSE VOLTAGE (VOLTS)
, REVERSE VOLTAGE (VOLTS)
1.0
5.0
10
50
1N5820
1N5822
50
2.0
40
7.0
40
28
15
28
5.0
10
20
20
20
1N5820, 1N5821, 1N5822
Figure 5. Thermal Response
10
15
15
10
http://onsemi.com
30
15
10
20
8.0
8.0
t, TIME (ms)
20
40
5
50
125
105
115
5.0
40
35
30
25
20
15
10
95
85
75
0
DT
DT
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t
t
1
100
t
1
3.0
p
+ t
JL
JL
0
+ t
p
= P
= the increase in junction temperature above the lead temperature.
, etc.
Figure 2. Maximum Reference Temperature
Figure 4. Steady-State Thermal Resistance
p
) = normalized value of transient thermal resistance at time
pk
200
4.0
1/8
t
• R
1
P
pk
R
qJL
qJA
5.0
2/8
[D + (1 - D) • r(t
V
(°C/W) = 70
R
500
, REVERSE VOLTAGE (VOLTS)
L, LEAD LENGTH (INCHES)
P
pk
TIME
3/8
7.0
1.0 k
1N5821
50
1
DUTY CYCLE = t
PEAK POWER, P
equivalent square power pulse.
4/8
+ t
p
40
2.0 k
10
BOTH LEADS TO HEATSINK,
EQUAL LENGTH
) + r(t
5/8
p
28
) - r(t
MAXIMUM
TYPICAL
LEAD LENGTH = 1/4″
1
5.0 k
20
p
15
)] where:
pk
/t
6/8
1
, is peak of an
15
20
10 k
7/8
10
8.0
20 k
1.0
30