1N5821G ON Semiconductor, 1N5821G Datasheet - Page 2

• Manufacturer Part Number: 1N5821G
• Description: DIODE SCHOTTKY 3A 30V DO-201AD
• Manufacturer: ON Semiconductor

Specifications of 1N5821G

• Voltage - Forward (vf) (max) @ If: 500mV @ 3A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 2mA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 3 A
• Max Surge Current: 80 A
• Configuration: Single
• Forward Voltage Drop: 0.9 V @ 9.4 A
• Maximum Reverse Leakage Current: 2000 uA
• Operating Temperature Range: - 65 C to + 125 C
• Mounting Style: Through Hole
• Current, Forward: 3 A
• Current, Reverse: 20 mA
• Current, Surge: 80 A
• Package Type: DO-201AD
• Primary Type: Schottky Barrier
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -65 to +125 °C
• Voltage, Forward: 0.5 V
• Voltage, Reverse: 30 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1N5821G; 1N5821GOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Lead Temperature reference is cathode lead 1/32″ from case.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
*Indicates JEDEC Registered Data for 1N5820-22.
MAXIMUM RATINGS
*THERMAL CHARACTERISTICS
*ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Non-Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current (Note 1)
Ambient Temperature
Non-Repetitive Peak Surge Current
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current
Working Peak Reverse Voltage
DC Blocking Voltage
V
(R
Rated V
R
(Surge applied at rated load conditions, half wave, single phase
60 Hz, T
(Reverse Voltage applied)
(i
(i
(i
@ Rated dc Voltage (Note 2)
T
T
F
F
F
L
L
R(equiv)
qJA
qJA
= 1.0 Amp)
= 3.0 Amp)
= 9.4 Amp)
= 25°C
= 100°C
= 28°C/W
= 28°C/W, P.C. Board Mounting, see Note 5)
R(dc)
L
v 0.2 V
= 75°C)
, P
F(AV)
R(dc)
= 0
, T
L
= 95°C
Characteristic
Rating
(Note 5)
(T
Characteristic
L
= 25°C unless otherwise noted) (Note 1)
1N5820, 1N5821, 1N5822
http://onsemi.com
2
Symbol
V
Symbol
T
V
V
V
R(RMS)
I
J
FSM
RWM
RRM
V
RSM
, T
V
T
I
i
R
O
A
R
F
stg
1N5820
1N5820
0.370
0.475
0.850
2.0
20
24
14
90
20
80 (for one cycle)
Symbol
-65 to +125
R
1N5821
1N5821
qJA
0.380
0.500
0.900
3.0
2.0
30
36
21
85
20
1N5822
1N5822
0.390
0.525
0.950
Max
28
2.0
40
48
28
80
20
°C/W
Unit
Unit
Unit
mA
°C
°C
V
V
V
A
A
V