STPSC1006D STMicroelectronics, STPSC1006D Datasheet - Page 2

• Manufacturer Part Number: STPSC1006D
• Description: DIODE SCHOTTKY 600V 10A TO-220AC
• Manufacturer: STMicroelectronics

Specifications of STPSC1006D

• Voltage - Forward (vf) (max) @ If: 1.75V @ 10A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 10A
• Current - Reverse Leakage @ Vr: 300µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 650pF @ 0V 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2, TO-220AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6821-5

Characteristics
1
2/7
Characteristics
Table 2.
Table 3.
Table 4.
1. t
2. t
To evaluate the conduction losses use the following equation:
P = 1.2 x I
Table 5.
Symbol
Symbol
I
Symbol
Symbol
V
V
F(RMS)
I
I
I
R
R
T
FRM
FSM
F
RRM
p
p
I
T
Q
stg
th(j-c)
F
C
(1)
(2)
= 10 ms, δ < 2%
= 500 µs, δ < 2%
j
c
Reverse leakage
current
Forward voltage drop
Repetitive peak reverse voltage
RMS forward current
Continuous forward current
Surge non repetitive forward current
Repetitive peak forward current
Storage temperature range
Operating junction temperature
F(AV)
Total capacitive charge
Total capacitance
Junction to case
Absolute ratings (limiting values at 25 °C unless otherwise specified)
Thermal resistance
Static electrical characteristics (per diode)
Other parameters
+ 0.09 x I
Parameter
Parameter
F
2
(RMS)
Parameter
T
T
T
T
j
j
j
j
= 25 °C
= 150 °C
= 25 °C
= 150 °C
V
T
V
Parameter
j
r
r
Tests conditions
= 150 °C
= 400 V, I
= 0 V, T
c
T
t
δ = 0.1, T
T
V
I
p
= 25 °C, F = 1 Mhz
F
F
C
j
Test conditions
R
= 10 ms sinusoidal
= 150 °C
= 10 A
= 10 A dI
= 115 °C
= V
RRM
C
= 110 °C,
F
/dt = -200 A/µs
Min.
Value
2
Typ
210
1.4
1.6
30
Max.
1500
300
1.7
2.1
-55 to +175
-40 to +175
Typ
650
Value
12
STPSC1006D
600
18
10
40
40
°C/W
Unit
Unit
µA
V
Unit
nC
pF
Unit
°C
°C
V
A
A
A
A