STPSC1006D STMicroelectronics, STPSC1006D Datasheet

DIODE SCHOTTKY 600V 10A TO-220AC

STPSC1006D

Manufacturer Part Number
STPSC1006D
Description
DIODE SCHOTTKY 600V 10A TO-220AC
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPSC1006D

Voltage - Forward (vf) (max) @ If
1.75V @ 10A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
10A
Current - Reverse Leakage @ Vr
300µA @ 600V
Diode Type
Silicon Carbide Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Capacitance @ Vr, F
650pF @ 0V 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2, TO-220AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6821-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STPSC1006D
Manufacturer:
STMicroelectronics
Quantity:
100
Part Number:
STPSC1006D
Manufacturer:
ST
0
Features
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
May 2008
No or negligible reverse recovery
Switching behavior independent of
temperature
Particularly suitable in PFC boost diode
function
600 V power Schottky silicon carbide diode
Rev 1
Table 1.
Q
T
V
I
j (max)
F(AV)
C (typ)
RRM
Device summary
STPSC1006D
TO-220AC
STPSC1006D
K
A
175 °C
12 nC
600 V
10 A
www.st.com
1/7
7

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STPSC1006D Summary of contents

Page 1

... ST SiC diodes will boost the performance of PFC operations in hard switching conditions. May 2008 600 V power Schottky silicon carbide diode Table 1. Device summary I F(AV) V RRM T j (max (typ) Rev 1 STPSC1006D A K TO-220AC STPSC1006D 10 A 600 V 175 ° 1/7 www.st.com 7 ...

Page 2

... ° 150 ° (RMS) Parameter Test conditions V = 400 150 ° ° Mhz r c STPSC1006D Value 600 18 = 115 ° 110 ° -55 to +175 -40 to +175 Value 2 Min. Typ Max. 30 300 = V RRM 210 1500 1.4 1.7 1.6 2.1 Typ /dt = -200 A/µs ...

Page 3

... STPSC1006D Figure 1. Forward voltage drop versus forward current (typical values =25 °C =25 ° 0.0 0.5 1.0 1.5 Figure 3. Peak forward current versus case temperature 70 60 δ=0 δ=0.3 30 δ=0.5 20 δ=1 δ=0 (° 100 Figure 2. 1.E+04 1.E+ =150 °C =150 ° 1.E+02 ...

Page 4

... F I =10A F V =400 V R Tj=150 °C dI /dt(A/µ 100 150 200 250 300 350 STPSC1006D Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform, typical values) T =25 ° =125 ° (s) p 1.E-04 1.E-03 1.E-02 1.E-01 400 450 500 1 ...

Page 5

... STPSC1006D 2 Package information ● Epoxy meets UL94, V0 ● Cooling method: C ● Recommended torque value: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97 ...

Page 6

... Ordering information 3 Ordering information Table 7. Ordering information Order code STPSC1006D 4 Revision history Table 8. Document revision history Date Revision 05-May-2008 6/7 Marking Package STPSC1006D TO-220AC Description of changes 1 First issue STPSC1006D Weight Base qty Delivery mode 1. Tube ...

Page 7

... STPSC1006D Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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