1N5820 STMicroelectronics, 1N5820 Datasheet - Page 4

• Manufacturer Part Number: 1N5820
• Description: DIODE SCHOTTKY 20V 3A DO201AD
• Manufacturer: STMicroelectronics

Specifications of 1N5820

• Voltage - Forward (vf) (max) @ If: 475mV @ 3A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 2mA @ 20V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Other names: 1N5820ST; 1N5820ST; 497-6642-2; 497-6642-2; 497-6642-3

1N582x
Fig. 9-1: Reverse leakage current versus reverse
voltage applied (typical values) (1N5820/1N5821).
4/5
1E+2
1E+1
1E+0
Fig. 10-1: Forward voltage drop versus forward
current (typical values) (1N5820/1N5821).
50.00
10.00
Fig. 11: Non repetitive surge peak forward current
versus number of cycles.
100
1E-1
1E-2
1E-3
1.00
0.10
0.01
80
60
40
20
0
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
IFSM(A)
0
IR(mA)
IFM(A)
Tj=125°C
Tj=100°C
Tj=125°C
5
Tj=25°C
10
Number of cycles
10
Tj=25°C
Tj=100°C
VFM(V)
1N5820
VR(V)
15
F=50Hz
100
20
Tj initial=25°C
1N5821
25
1000
30
Fig. 9-2: Reverse leakage current versus reverse
voltage applied (typical values) (1N5822).
Fig. 10-2: Forward voltage drop versus forward
current (typical values) (1N5822).
5E+1
1E+1
1E+0
50.00
10.00
1E-1
1E-2
1E-3
1.00
0.10
0.01
0.0
0
IR(mA)
IFM(A)
Tj=125°C
0.2
5
Tj=125°C
Tj=100°C
Tj=25°C
10
0.4
Tj=25°C
Tj=100°C
0.6
15
VFM(V)
VR(V)
0.8
20
1.0
25
1.2
30
1.4
35
1.6
40