1N5820 STMicroelectronics, 1N5820 Datasheet
1N5820
Specifications of 1N5820
1N5820ST
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1N5820 Summary of contents
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... Rth July 2003 - Ed 150°C 0.475 V wheeling, polarity Parameter T = 100 110 Sinusoidal tp = 1µ 25°C 1N582x DO-201AD Value 1N5820 1N5821 1N5822 1700 - 150 150 10000 Unit °C °C V/µs 1/5 ...
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... Pulse test : * tp = 380 µs, < evaluate the conduction losses use the following equations : 0. 0.035 I F(AV) F (RMS ) 0. 0.060 I F(AV) F (RMS ) Fig. 1: Average forward power dissipation versus average forward current (1N5820/1N5821). PF(av)(W) 1.8 = 0.2 = 0.1 1.6 = 0.05 1.4 1.2 1.0 0.8 0.6 0.4 0.2 IF(av) (A) ...
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... Fig. 5-1: Average forward current versus ambient temperature ( =0.5) (1N5820/1N5821). IF(av)(A) 3.5 Rth(j-a)=Rth(j-l)=25°C/W 3.0 2.5 2.0 Rth(j-a)=80°C/W 1.5 1.0 T 0.5 Tamb(°C) tp =tp/T 0 Fig. 6-1: Non repetitive surge peak forward current versus overload duration (maximum values) (1N5820/1N5821). IM(A) ...
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... Fig. 9-1: Reverse leakage current versus reverse voltage applied (typical values) (1N5820/1N5821). IR(mA) 1E+2 1N5820 Tj=125°C 1E+1 1E+0 Tj=100°C 1E-1 Tj=25°C 1E-2 VR(V) 1E Fig. 10-1: Forward voltage drop versus forward current (typical values) (1N5820/1N5821). IFM(A) 50.00 10.00 Tj=125° ...
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... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. ...