STPS2150A STMicroelectronics, STPS2150A Datasheet - Page 4

• Manufacturer Part Number: STPS2150A
• Description: DIODE SCHOTTKY 150V 2A SMA
• Manufacturer: STMicroelectronics

Specifications of STPS2150A

• Voltage - Forward (vf) (max) @ If: 820mV @ 2A
• Voltage - Dc Reverse (vr) (max): 150V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 1.5µA @ 150V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Product: Schottky Diodes
• Peak Reverse Voltage: 150 V
• Forward Continuous Current: 2 A
• Max Surge Current: 75 A
• Configuration: Single
• Forward Voltage Drop: 0.89 V @ 4 A
• Maximum Reverse Leakage Current: 1.5 uA
• Operating Temperature Range: + 175 C
• Mounting Style: SMD/SMT
• Rectifier Type: Schottky Diode
• Peak Rep Rev Volt: 150V
• Avg. Forward Curr (max): 2A
• Rev Curr: 1.5uA
• Peak Non-repetitive Surge Current (max): 75A
• Forward Voltage: 0.89V
• Operating Temp Range: -65C to 175C
• Package Type: SMA
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2467-2

Characteristics
4/9
Figure 7.
Figure 9.
Figure 11. Reverse leakage current versus
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-03
6
5
4
3
2
1
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-01
1.E-02
1.E-02
I (A)
M
Z
th(j-a)
Single pulse
0
I (µA)
I
M
SMA
R
/R
th(j-a)
1.E-01
δ
Non repetitive surge peak forward
current versus overload duration
(maximum values, SMAflat)
Relative variation of thermal
impedance junction to ambient
versus pulse duration (SMA)
reverse voltage applied
(typical values)
=0.5
t
25
1.E-02
1.E+00
50
t(s)
V (V)
T =150°C
T =125°C
T =100°C
T =75°C
T =50°C
T =25°C
j
j
j
j
j
j
R
75
1.E+01
1.E-01
t (s)
p
100
1.E+02
125
SMAflat
T
T
T
a
a
a
=25°C
=125°C
=75°C
1.E+03
1.E+00
150
Figure 8.
Figure 10. Relative variation of thermal
Figure 12. Junction capacitance versus
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1000
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
1.E-02
1.E-01
10
Z
Z
C(pF)
th(j-a)
th(j-a)
1
Single pulse
Single pulse
SMAflat
DO-15
/R
/R
th(j-a)
th(j-a)
1.E-01
Relative variation of thermal
impedance junction to ambient
versus pulse duration (DO-15)
impedance junction to ambient
versus pulse duration (SMAflat)
reverse voltage applied
(typical values)
1.E+00
10
1.E+00
1.E+01
V (V)
R
1.E+01
t (s)
p
t (s)
p
100
1.E+02
1.E+02
V
OSC
STPS2150
F=1MHz
T =25°C
=30mV
j
RMS
1.E+03
1.E+03
1000