STPS2150A STMicroelectronics, STPS2150A Datasheet - Page 3

DIODE SCHOTTKY 150V 2A SMA

STPS2150A

Manufacturer Part Number
STPS2150A
Description
DIODE SCHOTTKY 150V 2A SMA
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS2150A

Voltage - Forward (vf) (max) @ If
820mV @ 2A
Voltage - Dc Reverse (vr) (max)
150V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
1.5µA @ 150V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Product
Schottky Diodes
Peak Reverse Voltage
150 V
Forward Continuous Current
2 A
Max Surge Current
75 A
Configuration
Single
Forward Voltage Drop
0.89 V @ 4 A
Maximum Reverse Leakage Current
1.5 uA
Operating Temperature Range
+ 175 C
Mounting Style
SMD/SMT
Rectifier Type
Schottky Diode
Peak Rep Rev Volt
150V
Avg. Forward Curr (max)
2A
Rev Curr
1.5uA
Peak Non-repetitive Surge Current (max)
75A
Forward Voltage
0.89V
Operating Temp Range
-65C to 175C
Package Type
SMA
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2467-2

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STPS2150
Figure 1.
Figure 3.
Figure 5.
0.001
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.01
10
0.1
1.E-03
9
8
7
6
5
4
3
2
1
0
0.0
1
0.01
I (A)
P
M
P
F(AV)
P
ARM
ARM p
I
M
0.2
(W)
(1µs)
(t )
0.4
δ
Average forward power
dissipation versus average
forward current
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, DO-15)
0.1
=0.5
t
0.6
1.E-02
δ = 0.05
0.8
1
I
1.0
t (µs)
F(AV)
p
t(s)
δ = 0.1
(A)
1.2
10
1.E-01
1.4
δ = 0.2
1.6
δ = 0.5
100
δ
=tp/T
1.8
T
T
T
DO-15
a
a
a
=25°C
=75°C
=125°C
δ = 1
T
2.0
1.E+00
tp
1000
2.2
Figure 2.
Figure 4.
Figure 6.
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
0.8
0.6
0.4
0.2
10
1.E-03
9
8
7
6
5
4
3
2
1
0
1
0
I (A)
I
0
M
F(AV)
25
P
P
ARM
I
ARM
M
δ
(A)
=tp/T
R
(25°C)
th(j-a)
25
(T )
=100°C/W
T
j
δ
Average forward current versus
ambient temperature (δ = 0.5)
Normalized avalanche power
derating versus junction
temperature
Non repetitive surge peak forward
current versus overload duration
(maximum values, SMA)
=0.5
50
t
tp
50
1.E-02
R
th(j-a)
75
T
75
=200°C/W
amb
R
t(s)
th(j-a)
T (°C)
j
=R
(°C)
th(j-l)
100
100
1.E-01
DO-15
125
Characteristics
125
SMA / SMAflat
150
T
a
T
T
=125°C
a
a
SMA
=25°C
=75°C
1.E+00
150
175
3/9

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