STPS1L30U STMicroelectronics, STPS1L30U Datasheet - Page 3

• Manufacturer Part Number: STPS1L30U
• Description: DIODE SCHOTTKY 30V 1A SMB
• Manufacturer: STMicroelectronics

Specifications of STPS1L30U

• Voltage - Forward (vf) (max) @ If: 395mV @ 1A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 200µA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 1 A
• Max Surge Current: 75 A
• Configuration: Single
• Forward Voltage Drop: 0.395 V
• Maximum Reverse Leakage Current: 200 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2468-2

Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values) (SMA)
Figure
impedance junction to ambient versus pulse
duration
e(Cu)=35µm, recommended pad layout) (SMA)
Figure 9: Reverse leakage current versus
reverse voltage applied (typical values)
1E+2
1E+1
1E+0
10
1E-1
1E-2
1E-3
1.0
0.8
0.6
0.4
0.2
0.0
8
6
4
2
0
1E-3
1E-2
I (A)
M
0
Z
I (mA)
δ = 0.5
Single pulse
R
I
δ = 0.2
δ = 0.1
M
th(j-c)
δ
7:
/R
=0.5
t
th(j-c)
1E-1
5
(epoxy
Relative
1E-2
10
1E+0
printed
V (V)
t(s)
R
t (s)
T =150°C
T =125°C
T =100°C
T =25°C
variation
p
j
j
j
j
15
1E+1
1E-1
circuit
20
of
δ
=tp/T
1E+2
25
thermal
T =100°C
T
T =25°C
T =50°C
a
a
a
board,
tp
5E+2
1E+0
30
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values) (SMB)
Figure
impedance junction to ambient versus pulse
duration
e(Cu)=35µm, recommended pad layout) (SMB)
Figure
reverse voltage applied (typical values)
500
100
10
1.0
0.8
0.6
0.4
0.2
0.0
10
8
6
4
2
0
1E-3
1E-2
I (A)
M
1
C(pF)
Z
δ = 0.5
Single pulse
δ = 0.2
δ = 0.1
th(j-c)
I
M
8:
/R
10:
δ
=0.5
t
th(j-c)
1E-1
(epoxy
2
Relative
Junction
1E-2
1E+0
printed
V (V)
t(s)
t (s)
variation
5
R
p
capacitance
1E+1
1E-1
circuit
10
of
STPS1L30
δ
=tp/T
1E+2
F=1MHz
T =25°C
j
thermal
T
T =100°C
versus
T =25°C
T =50°C
a
20
board,
a
a
tp
5E+2
1E+0
3/7
30