PMBD6050,215 NXP Semiconductors, PMBD6050,215 Datasheet - Page 5

• Manufacturer Part Number: PMBD6050,215
• Description: DIODE HIGH SPEED SWITCHING SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBD6050,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 70V
• Current - Average Rectified (io): 215mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 85 V
• Forward Voltage Drop: 1.25 V at 0.15 A
• Recovery Time: 4 ns
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Reverse Current Ir: 0.1 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4877-2; 933859220215; PMBD6050 T/R; PMBD6050 T/R; PMBD6050,215

NXP Semiconductors
GRAPHICAL DATA
2004 Jan 14
handbook, full pagewidth
High-speed diode
Device mounted on an FR4 printed-circuit board.
Fig.2
Based on square wave currents.
T
(mA)
j
I FSM
= 25 °C prior to surge.
I F
(A)
10
250
200
150
100
10
50
10
−1
0
1
2
0
1
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
50
100
10
150
T amb (
MSA562 -1
o
C)
200
10
5
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
300
200
100
I F
j
j
j
0
= 150 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
0
Forward current as a function of forward
voltage.
10
3
(1)
1
(2)
t p (µs)
V F (V)
(3)
PMBD6050
Product data sheet
MBG382
MBG704
10
2
4