PMBD6050,215 NXP Semiconductors, PMBD6050,215 Datasheet
PMBD6050,215
Specifications of PMBD6050,215
933859220215
PMBD6050 T/R
PMBD6050 T/R
PMBD6050,215
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PMBD6050,215 Summary of contents
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DATA SHEET dbook, halfpage PMBD6050 High-speed diode Product data sheet Supersedes data of 1999 May 11 DISCRETE SEMICONDUCTORS M3D088 2004 Jan 14 ...
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... NXP Semiconductors High-speed diode FEATURES • Small plastic SMD package • High switching speed: max • Continuous reverse voltage: max • Repetitive peak reverse voltage: max • Repetitive peak forward current: max. 500 mA. APPLICATIONS • High-speed switching in thick and thin-film circuits. ...
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... NXP Semiconductors High-speed diode LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V repetitive peak reverse voltage RRM V continuous reverse voltage R I continuous forward current F I repetitive peak forward current FRM I non-repetitive peak forward FSM current P total power dissipation ...
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... NXP Semiconductors High-speed diode ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER V forward voltage F I reverse current R C diode capacitance d t reverse recovery time rr V forward recovery voltage fr THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to tie-point th(j-tp) R thermal resistance from junction to ambient ...
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... NXP Semiconductors High-speed diode GRAPHICAL DATA 250 I F (mA) 200 150 100 100 Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature handbook, full pagewidth I FSM ( − Based on square wave currents °C prior to surge Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. ...
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... NXP Semiconductors High-speed diode 2 10 handbook, halfpage I R (µA) 10 (1) ( 100 ( maximum values typical values typical values. R Fig.5 Reverse current as a function of junction temperature. handbook, full pagewidth D.U. Ω ( mA. R Fig.7 Reverse recovery voltage test circuit and waveforms. 2004 Jan 14 MBG379 ...
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... NXP Semiconductors High-speed diode I Ω Ω 450 Ω D.U.T. Fig.8 Forward recovery voltage test circuit and waveforms. 2004 Jan 14 I 90% OSCILLOSCOPE Ω 10% MGA882 PMBD6050 input signal Product data sheet t output signal ...
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... NXP Semiconductors High-speed diode PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...