BYV52PI-200RG STMicroelectronics, BYV52PI-200RG Datasheet - Page 4

• Manufacturer Part Number: BYV52PI-200RG
• Description: DIODE FAST REC 200V 30A HE TOP31
• Manufacturer: STMicroelectronics

Specifications of BYV52PI-200RG

• Voltage - Forward (vf) (max) @ If: 850mV @ 20A
• Current - Reverse Leakage @ Vr: 25µA @ 200V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TOP-3 Insulated
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3807; 497-3807-5

BYV52/PI
Fig.7
temperature.
(duty cycle : 0.5) (SOD93)
35
30
25
20
15
10
Fig.9 : Junction capacitance versus reverse
voltage applied (Typical values).
20 0
1 90
1 80
1 70
1 60
1 50
1 40
1 30
1 20
11 0
1 00
Fig.11 : Peak reverse current versus dIF/dt.
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4/6
5
0
0
I
1
F(av)(A)
1
C(pF)
IRM(A)
90%CONFIDENCE
=0.5
IF=IF(av)
=tp/T
20
:
2 0
Average
T
40
tp
Tamb( C)
60
1 0
current
Rth(j-a)=15
VR(V)
o
80
1 0
dIF/dt(A/us)
F=1Mhz Tj=25 C
Rth(j-a)=Rth(j-c)
100
o
versus
Tj=100 C
C/W
Tj=25 C
120
O
O
1 00
140
o
ambient
1 00
200
160
Fig.8
temperature.
(duty cycle : 0.5) (TOP3I)
35
30
25
20
15
10
Fig.10 : Recovery charges versus dI
1 00
Fig.12 : Dynamic parameters versus junction
temperature.
1.50
1.25
1.00
0.75
0.50
0.25
0.00
5
0
90
80
70
60
50
40
30
20
1 0
0
0
I
F(av)(A)
1
0
QRR;IRM[Tj]/QRR;IRM[Tj=125 C]
QRR(nC)
=0.5
90%CONFIDENCE
=tp/T
IF=IF(av)
20
:
25
Average
T
40
tp
50
Tamb( C)
60
Tj( C)
IRM
o
current
Rth(j-a)=15
o
80
1 0
75
dIF/dt(A/us)
QRR
Rth(j-a)=Rth(j-c)
100
Tj=100 C
100
o
versus
o
C/W
120
Tj=25 C
F
/dt.
O
125
140
O
ambient
1 00
150
160