BYV52-200 STMicroelectronics, BYV52-200 Datasheet
BYV52-200
Specifications of BYV52-200
Available stocks
Related parts for BYV52-200
BYV52-200 Summary of contents
Page 1
... F(RMS) I Average forward current F(AV) = 0.5 I Surge non repetitive forward current FSM Tstg Storage and junction temperature range Tj Symbol V Repetitive peak reverse voltage RRM October 1999 BYV52-200 Parameter SOT93 Tc=110 C TOP3I Tc=90 C tp=10ms sinusoidal Parameter BYV52/ isolated SOT93 TOP3I (Plastic) (Plastic) ...
Page 2
... BYV52/PI THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Rth (c) Coupling When the diodes 1 and 2 are used simultaneously : Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol 100 125 125 Pulse test : * ms, duty cycle < 380 s, duty cycle < ...
Page 3
... Fig.6 : Non repetitive surge peak forward current versus overload duration. (TOP3I) I M(A) 250 200 150 o Tc=25 C 100 o Tc= Tc=110 C 0 0.1 1 0.001 P=20W =tp/T P=10W P=30W Rth(j- tp(s) 1.0E-02 1.0E-01 t t(s) =0.5 0.01 0.1 BYV52/ =tp/T tp 1.0E+00 o Tc= Tc= Tc= 3/6 ...
Page 4
... BYV52/PI Fig.7 : Average current temperature. (duty cycle : 0.5) (SOD93) I F(av)(A) 35 Rth(j-a)=Rth(j- =tp Rth(j-a)=15 5 Tamb 100 Fig.9 : Junction capacitance versus reverse voltage applied (Typical values). C(pF F=1Mhz Tj= VR( Fig.11 : Peak reverse current versus dIF/dt. IRM(A) 3.0 90%CONFIDENCE IF=IF(av) 2.5 2 ...
Page 5
... F 1.10 1.30 0.043 F3 1.75 G 10.80 11.10 0.425 H 14.70 15.20 0.578 L 12.20 L2 16.20 L3 18.0 L5 3.95 4.15 0.156 L6 31.00 O 4.00 4.10 0.157 BYV52/PI Inches 0.193 0.054 0.098 0.050 0.031 0.051 0.069 0.437 0.598 0.480 0.638 0.709 0.163 1.220 0.161 5/6 ...
Page 6
... BYV52/PI PACKAGE MECHANICAL DATA TOP3I (isolated) Marking : Type number Cooling method : C Weight : 4.46 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...