DSEK60-12A IXYS, DSEK60-12A Datasheet
DSEK60-12A
Manufacturer Part Number
DSEK60-12A
Description
DIODE FRED 1200V 2X26A TO-247
Manufacturer
IXYS
Datasheet
1.DSEK60-12A.pdf
(2 pages)
Specifications of DSEK60-12A
Voltage - Forward (vf) (max) @ If
2.55V @ 30A
Current - Reverse Leakage @ Vr
750µA @ 1200V
Current - Average Rectified (io) (per Diode)
26A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Reverse Recovery Time (trr)
60ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TO-247AD
Vrrm, (v)
1200
Ifavm, D = 0.5, Total, (a)
52
Ifavm, D = 0.5, Per Diode, (a)
26
@ Tc, (°c)
85
Ifrms, (a)
50
Ifsm, 10 Ms, Tvj=45°c, (a)
200
Vf, Max, Tvj =150°c, (v)
2.20
@ If, (a)
30
Trr, Typ, Tvj =25°c, (ns)
40
Irm , Typ, Tvj =100°c, (a)
16
@ -di/dt, (a/µs)
240
Tvjm, (°c)
150
Rthjc, Max, (k/w)
1.90
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DSEK30-12A
DSEK30-12A
DSEK30-12A
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DSEK60-12A
Manufacturer:
IXYS
Quantity:
12 500
© 2000 IXYS All rights reserved
Common Cathode
Fast Recovery
Epitaxial Diode (FRED)
V
V
1200
Symbol
I
I
I
I
I
T
T
T
P
M
Weight
Symbol
I
V
V
r
R
R
R
t
I
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
FRMS
FAVM
FRM
FSM
2
R
rr
RM
T
t
VJ
VJM
stg
RSM
tot
F
T0
thJC
thCK
thJA
d
I
FAVM
ÿÿ
rating includes reverse blocking losses at T
1200
V
T
T
t
T
T
T
T
T
Mounting torque
T
T
T
I
For power-loss calculations only
T
I
V
L £ 0.05 mH; T
Test Conditions
Test Conditions
V
P
F
F
RRM
VJ
C
VJ
VJ
VJ
VJ
C
VJ
VJ
VJ
VJ
R
< 10 ms; rep. rating, pulse width limited by T
= 30 A;
= 1 A; -di/dt = 100 A/ms; V
= 85°C; rectangular, d = 0.5
= 25°C
= 540 V;
= T
= 45°C;
= 150°C; t = 10 ms (50 Hz), sine
= 45°C
= 150°C; t = 10 ms (50 Hz), sine
= 25°C
= 25°C
= 125°C
= T
VJM
VJM
VJ
Type
DSEK 60-12A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
V
V
V
T
T
I
F
VJ
VJ
R
R
R
= 100°C
= 30 A; -di
= V
= 0.8 • V
= 0.8 • V
= 150°C
= 25°C
RRM
F
RRM
RRM
/dt = 240 A/ms
R
VJM
= 30 V; T
, V
R
= 0.8 V
VJ
= 25°C
RRM
, duty cycle d = 0.5
VJM
typ.
0.25
40
16
-40...+150
-40...+150
Characteristic Values
A
0.8...1.2
Maximum Ratings
DSEK 60
375
200
210
185
195
200
180
170
160
150
125
50
26
max.
2.55
1.65
18.2
750
250
6
2.2
0.9
70
60
18
C
7
K/W
K/W
K/W
mW
A
A
A
A
Nm
mA
mA
mA
°C
°C
°C
ns
W
A
A
A
A
A
A
A
A
g
V
V
V
A
2
2
2
2
s
s
s
s
I
V
t
TO-247 AD
A = Anode, C = Cathode, TAB = Cathode
Features
Applications
Advantages
FAVM
rr
International standard package
JEDEC TO-247 AD
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
Soft recovery behavior
Epoxy meets UL 94V-0
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
RRM
RM
A
C
-values
= 2x 26 A
= 1200 V
= 40 ns
A
C (TAB)
1 - 2
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DSEK60-12A Summary of contents
Page 1
... L £ 0.05 mH 100° rating includes reverse blocking losses at T FAVM Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved DSEK Maximum Ratings 50 ...
Page 2
... T J Fig. 4 Dynamic parameters versus junction temperature. 1.0 K/W 0.8 Z thJC 0.6 0.4 0.2 0.0 0.001 0.01 0.1 Fig. 7 Transient thermal impedance junction to case. © 2000 IXYS All rights reserved 6 T =100°C VJ µ 540V =30A =60A =30A ...