BYV32E-150,127 NXP Semiconductors, BYV32E-150,127 Datasheet - Page 3
![DIODE RECT 150V 20A SOT78](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
BYV32E-150,127
Manufacturer Part Number
BYV32E-150,127
Description
DIODE RECT 150V 20A SOT78
Manufacturer
NXP Semiconductors
Specifications of BYV32E-150,127
Package / Case
TO-220AB-3
Voltage - Forward (vf) (max) @ If
1.15V @ 20A
Current - Reverse Leakage @ Vr
30µA @ 150V
Current - Average Rectified (io) (per Diode)
20A
Voltage - Dc Reverse (vr) (max)
150V
Reverse Recovery Time (trr)
25ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
150 V
Forward Voltage Drop
1.15 V
Recovery Time
25 ns
Forward Continuous Current
20 A
Max Surge Current
137 A
Reverse Current Ir
30 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934011680127
BYV32E-150
BYV32E-150
BYV32E-150
BYV32E-150
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BYV32E-150,127
Manufacturer:
NXP
Quantity:
15
NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BYV32E-150_4
Product data sheet
Symbol
V
V
V
I
I
I
I
I
T
T
V
O(AV)
FRM
FSM
RRM
RSM
Fig 1.
stg
j
RRM
RWM
R
ESD
P
(W)
tot
12
8
4
0
average forward current; sinusoidal waveform;
maximum values
Forward power dissipation as a function of
0
Limiting values
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average output current
repetitive peak forward
current
non-repetitive peak
forward current
repetitive peak reverse
current
non-repetitive peak
reverse current
storage temperature
junction temperature
electrostatic discharge
voltage
4.0
4
2.8
2.2
1.9
a = 1.57
8
Conditions
DC
square-wave pulse; δ = 0.5; T
diodes conducting; see
δ = 0.5; t
t
diode
t
diode
δ = 0.001; t
t
HBM; C = 250 pF; R = 1.5 kΩ; all pins
p
p
p
= 10 ms; sine-wave pulse; T
= 8.3 s; sine-wave pulse; T
= 100 µs
I
F(AV)
003aac978
(A)
p
= 25 µs; T
p
12
Rev. 04 — 2 March 2009
= 2 µs
mb
≤ 115 °C; per diode
Figure
Fig 2.
Dual rugged ultrafast rectifier diode, 20 A, 150 V
j(init)
mb
P
(W)
j(init)
1; see
tot
15
10
≤ 115 °C; both
5
0
= 25 °C; per
average forward current; square waveform;
maximum values
Forward power dissipation as a function of
0
= 25 °C; per
Figure 2
0.1
5
0.2
BYV32E-150
0.5
Min
-
-
-
-
-
-
-
-
-
-40
-
-
10
I
F(AV)
© NXP B.V. 2009. All rights reserved.
δ = 1
003aac979
Max
150
150
150
20
20
125
137
0.2
0.2
150
150
8
(A)
15
Unit
V
V
V
A
A
A
A
A
A
°C
°C
kV
3 of 9