BAT54XY,115 NXP Semiconductors, BAT54XY,115 Datasheet - Page 3

• Manufacturer Part Number: BAT54XY,115
• Description: DIODE SCHOTTKY 30V 200MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of BAT54XY,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 30V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 2 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Double Dual Series
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA @ 25 V
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-3417-2; 934059127115; BAT54XY T/R

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAT54XY_2
Product data sheet
Table 6.
[1]
Table 7.
T
[1]
Symbol
R
Symbol
Per diode
V
I
C
R
amb
F
th(j-s)
d
Soldering point at pins 2, 3, 5 and 6.
Pulse test: t
= 25
°
C unless otherwise specified.
Parameter
thermal resistance from junction to
soldering point
Thermal characteristics
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
p
≤ 300 μs; δ ≤ 0.02.
Schottky barrier quadruple diode in very small SOT363 package
Rev. 02 — 13 January 2010
Conditions
see
V
see
V
R
R
I
I
I
I
I
F
F
F
F
F
= 25 V; see
= 1 V; f = 1 MHz;
Figure
Figure 3
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
Conditions
in free air
1;
Figure 2
[1]
[1]
Min
-
Min
-
-
-
-
-
-
-
BAT54XY
Typ
-
-
-
-
-
-
-
Typ
-
© NXP B.V. 2010. All rights reserved.
Max
260
400
500
Max
240
320
800
2
10
Unit
K/W
Unit
mV
mV
mV
mV
mV
μA
pF
3 of 9