BAW156,215 NXP Semiconductors, BAW156,215 Datasheet - Page 5
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BAW156,215
Manufacturer Part Number
BAW156,215
Description
DIODE DUAL 75V 160MA SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.BAW156215.pdf
(8 pages)
Specifications of BAW156,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
5nA @ 75V
Current - Average Rectified (io) (per Diode)
160mA (DC)
Voltage - Dc Reverse (vr) (max)
75V
Reverse Recovery Time (trr)
3µs
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Anode
Mounting Type
Surface Mount
Product
Standard Recovery Rectifier
Configuration
Dual Common Anode
Reverse Voltage
85 V
Forward Voltage Drop
1.25 V at 0.15 A
Recovery Time
3000 ns
Forward Continuous Current
0.14 A
Max Surge Current
4 A
Reverse Current Ir
0.005 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934032650215
BAW156 T/R
BAW156 T/R
BAW156 T/R
BAW156 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAW156,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
1999 May 11
handbook, halfpage
handbook, full pagewidth
Low-leakage double diode
V
Fig.5
R
(nA)
I R
10
10
10
= 75 V.
V = V
10
10
1
R = 50
2
1
2
3
S
0
R
Reverse current as a function of junction
temperature; per diode.
I x R
F
Ω
S
(1)
(2)
50
100
I F
D.U.T.
Fig.7 Reverse recovery time test circuit and waveforms.
150
OSCILLOSCOPE
T ( C)
j
SAMPLING
R = 50
MGA881
MLB754
o
i
200
Ω
V R
5
handbook, halfpage
10%
t r
f = 1 MHz; T
Fig.6
90%
(pF)
C d
input signal
4
3
2
1
0
0
t p
Diode capacitance as a function of reverse
voltage; per diode; typical values.
j
= 25 °C.
5
t
10
I F
output signal
15
Product data sheet
V R (V)
BAW156
t rr
MBG525
20
(1)
t