BAW156,215 NXP Semiconductors, BAW156,215 Datasheet - Page 4
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BAW156,215
Manufacturer Part Number
BAW156,215
Description
DIODE DUAL 75V 160MA SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.BAW156215.pdf
(8 pages)
Specifications of BAW156,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
5nA @ 75V
Current - Average Rectified (io) (per Diode)
160mA (DC)
Voltage - Dc Reverse (vr) (max)
75V
Reverse Recovery Time (trr)
3µs
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Anode
Mounting Type
Surface Mount
Product
Standard Recovery Rectifier
Configuration
Dual Common Anode
Reverse Voltage
85 V
Forward Voltage Drop
1.25 V at 0.15 A
Recovery Time
3000 ns
Forward Continuous Current
0.14 A
Max Surge Current
4 A
Reverse Current Ir
0.005 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934032650215
BAW156 T/R
BAW156 T/R
BAW156 T/R
BAW156 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAW156,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
GRAPHICAL DATA
1999 May 11
handbook, full pagewidth
handbook, halfpage
Low-leakage double diode
Based on square wave currents.
T
Device mounted on a FR4 printed-circuit board.
Fig.2
j
= 25 °C prior to surge.
(mA)
I FSM
(A)
I F
10
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.
300
200
100
10
10
−1
0
1
2
0
1
Maximum permissible continuous forward
current as a function of ambient
temperature.
double diode loaded
single diode loaded
100
10
T
amb
( C)
o
MLB756
200
4
10
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
I F
300
200
100
0
j
j
j
= 150 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
0
Forward current as a function of forward
voltage; per diode.
0.4
10
3
0.8
(1)
t p (μs)
(2)
1.2
Product data sheet
V
BAW156
MLB752 - 1
(3)
F
MBG704
(V)
1.6
10
4