BAW56S,115 NXP Semiconductors, BAW56S,115 Datasheet - Page 13

• Manufacturer Part Number: BAW56S,115
• Description: DIODE ARRAY 90V 250MA H-S SOT363
• Manufacturer: NXP Semiconductors

Specifications of BAW56S,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Mounting Type: Surface Mount
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Voltage - Forward (vf) (max) @ If: 1V @ 50mA
• Voltage - Dc Reverse (vr) (max): 90V
• Current - Average Rectified (io) (per Diode): 250mA (DC)
• Diode Configuration: 2 Pair Series Connection
• Product: Switching Diodes
• Peak Reverse Voltage: 90 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 4 A
• Configuration: Double Dual Common Anode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934045730115::BAW56S T/R::BAW56S T/R

NXP Semiconductors
12. Revision history
Table 10.
BAV756S_BAW56_SER_5
Product data sheet
Document ID
BAV756S_BAW56_SER_5 20071126
Modifications:
BAV756S_2
BAW56_4
BAW56S_2
BAW56T_2
BAW56W_4
Revision history
Release date
19971021
20030325
19971021
19971219
19990511
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The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BAW56M added
Section 1.1 “General
Table 1 “Product
Table 2 “Quick reference
Table 6 “Limiting
change of V
Table 6 “Limiting
change of V
Table 8
change of I
Table 8
for T
Table 8
I
Table 8
change of I
Table 8
for I
Table 8
150 A for T
Table 8
I
Section 8 “Test
Section 10 “Packing
Section 11
Section 13 “Legal
R
R
maximum value from 1 A to 0.5 A for T
maximum value from 50 A to 150 A for T
R
j
= 25 C
condition V
“Characteristics”: for BAV756S change of I
“Characteristics”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
“Characteristics”: for BAW56, BAW56S, BAW56T and BAW56W change of
“Characteristics”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
“Characteristics”: for BAV756S change of I
“Characteristics”: for BAV756S change of I
“Characteristics”: for BAW56, BAW56S, BAW56T and BAW56W change of
R
R
“Soldering”: added
RRM
R
j
condition V
condition V
= 150 C
maximum value from 75 V to 90 V
Data sheet status
Product data sheet
Product specification
Product specification
Product specification
Product specification
Product specification
Rev. 05 — 26 November 2007
information”: added
maximum value from 85 V to 90 V
R
overview”: added
values”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
values”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
information”: updated
= 25 V; T
information”: added
description”: amended
R
R
data”: added
from 75 V to 80 V for T
from 75 V to 80 V for T
j
= 150 C
BAV756S; BAW56 series
Change notice
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-
-
-
-
-
j
= 25 C
j
= 150 C
j
j
R
= 25 C
= 150 C
R
R
maximum value from 2.5 A to 0.5 A
maximum value from 60 A to 30 A
maximum value from 100 A to
High-speed switching diodes
Supersedes
BAV756S_2
BAW56_4
BAW56S_2
BAW56T_2
BAW56W_4
BAV756S_1
BAW56_3
BAW56S_1
-
BAW56W_3
© NXP B.V. 2007. All rights reserved.
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