BFR30 T/R NXP Semiconductors, BFR30 T/R Datasheet - Page 4

• Manufacturer Part Number: BFR30 T/R
• Description: RF Bipolar Small Signal N-CH 25V 10mA
• Manufacturer: NXP Semiconductors

Specifications of BFR30 T/R

• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-23
• Other names: BFR30,215

NXP Semiconductors
CHARACTERISTICS
T
1997 Dec 05
I
I
V
V
V
y
y
y
y
C
C
V
SYMBOL
j
GSS
DSS
= 25 C unless otherwise specified.
GS
GS
GSoff
n
N-channel field-effect transistors
is
rs
fs
fs
os
os




gate cut-off current
drain current
gate-source voltage
gate-source voltage
gate-source cut-off voltage
common-source transfer admittance
common-source transfer admittance
common source output admittance
common source output admittance
input capacitance
feedback capacitance
equivalent input noise voltage
BFR30
BFR31
BFR30
BFR31
BFR30
BFR31
BFR30
BFR31
BFR30
BFR31
BFR30
BFR31
BFR30
BFR31
BFR30
BFR31
PARAMETER
V
V
I
I
I
I
T
I
T
I
I
V
V
I
B = 0.6 to 100 Hz
D
D
D
D
D
D
D
D
amb
amb
DS
GS
DS
DS
I
I
I
I
= 1 mA; V
= 50 A; V
= 0.5 nA; V
= 1 mA; V
= 200 A; V
= 1 mA; V
= 200 A; V
= 200 A; V
D
D
D
D
= 0; V
= 10 V; f = 1 MHz
= 10 V; f = 1 MHz; T
= 0; V
= 1 mA
= 0.2 nA
= 1 mA
= 200 A
= 25 C
= 25 C
4
GS
DS
CONDITIONS
DS
DS
DS
DS
= 10 V
= 10 V
DS
DS
DS
DS
= 10 V
= 10 V; f = 1 kHz;
= 10 V; f = 1 kHz
= 10 V
= 10 V
= 10 V; f = 1 kHz;
= 10 V; f = 1 kHz
= 10 V;
amb
= 25 C

4
1
0.7
0




1
1.5
0.5
0.75









MIN.
BFR30; BFR31
Product specification
0.2
10
5
3
1.3
4
2
5
2.5
4
4.5


40
25
20
15
4
4
1.5
1.5
0.5
MAX.
nA
mA
mA
V
V
V
V
V
V
mS
mS
mS
mS
S
S
S
S
pF
pF
pF
pF
V
UNIT