BFR30 T/R NXP Semiconductors, BFR30 T/R Datasheet - Page 3
![RF Bipolar Small Signal N-CH 25V 10mA](/photos/16/4/160412/sot23_sml.jpg)
BFR30 T/R
Manufacturer Part Number
BFR30 T/R
Description
RF Bipolar Small Signal N-CH 25V 10mA
Manufacturer
NXP Semiconductors
Datasheet
1.BFR30215.pdf
(13 pages)
Specifications of BFR30 T/R
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-23
Other names
BFR30,215
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Mounted on a ceramic substrate of 8 10 0.7 mm.
THERMAL CHARACTERISTICS
Note
1. Mounted on a ceramic substrate of 8 10 0.7 mm.
1997 Dec 05
handbook, halfpage
V
V
V
I
I
P
T
T
R
SYMBOL
SYMBOL
D
G
stg
j
DS
DGO
GSO
tot
N-channel field-effect transistors
th j-a
(mW)
P tot
300
200
100
0
0
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to ambient
Fig.2 Power derating curve.
40
PARAMETER
80
PARAMETER
120
160
T amb (°C)
MDA245
200
open source
open drain
T
amb
40 C; note 1; see Fig.2
3
CONDITIONS
note 1
CONDITIONS
65
MIN.
VALUE
430
BFR30; BFR31
25
25
25
10
5
250
+150
150
Product specification
MAX.
UNIT
K/W
V
V
V
mA
mA
mW
C
C
UNIT