PD55003L STMicroelectronics, PD55003L Datasheet - Page 5

• Manufacturer Part Number: PD55003L
• Description: RF MOSFET Power N-Ch 40 Volt 2.5 Amp
• Manufacturer: STMicroelectronics

Specifications of PD55003L

• Forward Transconductance Gfs (max / Min): 1 S
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Transistor Polarity: N-Channel
• Configuration: Single Triple Drain Triple Gate
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: - 0.5 V to + 15 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 14 W
• Maximum Operating Temperature: + 150 C
• Package / Case: VFQFPN Power Flat 14
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 40V
• Output Power (max): 3W
• Power Gain (typ)@vds: 19dB
• Frequency (max): 1GHz
• Package Type: Power Flat
• Pin Count: 14
• Forward Transconductance (typ): 1S
• Input Capacitance (typ)@vds: 34@12.5VpF
• Output Capacitance (typ)@vds: 23@12.5VpF
• Reverse Capacitance (typ): 1.8@12.5VpF
• Operating Temp Range: -65C to 150C
• Drain Efficiency (typ): 52%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 14000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE (BROADBAND)
Return Loss Vs Frequency
Power Gain Vs Frequency
-10
-15
-20
-25
-30
20
18
16
14
12
10
-5
8
6
4
2
0
0
4 70
47 0
480
480
490
490
50 0
50 0
f (MHz )
f (MHz )
5 10
510
5 20
5 20
Vds = 12.5
Id q = 50 m A
P out = 3 W
Vds = 12 .5 V
Idq = 50 m A
P out = 3 W
53 0
530
V
540
540
Efficiency Vs Frequency
60
50
40
30
20
10
0
47 0
48 0
49 0
50 0
f (MHz )
5 10
5 20
Vds = 12.5 V
Idq = 50 m A
Po ut = 3 W
PD55003L
5 30
5 40
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